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Sandall, Ian
37  Ergebnisse:
Personensuche X
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1

Comparison of Bio Sensing Techniques for VEGF:

, In: 2023 IEEE BioSensors Conference (BioSensors),
Alshammari, Adeem ; Hulme, Sorcha ; Zalinge, Harm van. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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2

In Situ Monitoring of Aptamer–Protein Binding on a ZnO Surf..:

Alshammari, Adeem ; van Zalinge, Harm ; Sandall, Ian
Sensors.  23 (2023)  14 - p. 6353 , 2023
Link: https://doi.org/10.3390/..
 
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3

An Aptamer-Functionalised Schottky-Field Effect Transistor ..:

Farrow, Thomas ; Laumier, Siriny ; Sandall, Ian.
Biosensors.  12 (2022)  5 - p. 347 , 2022
Link: https://doi.org/10.3390/..
 
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4

GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared..:

Cao, Zhongming ; Hulme, Sorcha ; Veal, Tim D...
Frontiers in Electronic Materials.  2 (2022)  - p. , 2022
Link: https://doi.org/10.3389/..
 
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5

Selection and Functionalization of Germanium Nanowires for ..:

Laumier, Siriny ; Farrow, Thomas ; van Zalinge, Harm...
ACS Omega.  7 (2022)  39 - p. 35288-35296 , 2022
Link: https://doi.org/10.1021/..
 
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6

Enhancing the engagement of large cohorts using live intera..:

Sedghi, Naser ; Limniou, Maria ; Al-Nuiamy, Waleed...
Developing Academic Practice.  2021 (2021)  January - p. 31-50 , 2021
Link: https://doi.org/10.3828/..
 
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7

Single-junction solar cells based on p-i-n GaAsSbN heterost..:

Milanova, Malina ; Donchev, Vesselin ; Cheetham, Kieran J....
Solar Energy.  208 (2020)  - p. 659-664 , 2020
Link: https://doi.org/10.1016/..
 
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8

GaSbBi metal-semiconductor-metal photodetectors for mid-inf..:

, In: 2020 IEEE Photonics Conference (IPC),
Cao, Zhongming ; Ashwin, Mark ; Veal, Tim. - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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9

GaAsSbN for Multi-Junction Solar Cells:

, In: 2020 47th IEEE Photovoltaic Specialists Conference (PVSC),
Mumtaz, Asim ; Milanova, Malina ; Sandall, Ian... - p. 1799-1803 , 2020
Link: https://doi.org/10.1109/..
 
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10

Influence of annealing on the electrical characteristic of ..:

Cao, Zhongming ; Veal, Tim D. ; Ashwin, Mark J...
Journal of Applied Physics.  126 (2019)  5 - p. , 2019
Link: https://doi.org/10.1063/..
 
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11

1300 nm Wavelength InAs Quantum Dot Photodetector Grown on ..:

Sandall, Ian ; Ng, Jo Shien ; David, John P. R....
Optics Express.  20 (2012)  10 - p. 10446 , 2012
Link: https://doi.org/10.1364/..
 
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12

Planar InAs photodiodes fabricated using He ion implantatio:

Sandall, Ian ; Tan, Chee Hing ; Smith, Andrew.
Optics Express.  20 (2012)  8 - p. 8575 , 2012
Link: https://doi.org/10.1364/..
 
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13

InAs-QDIP hybrid broadband infrared photodetector:

Tan, Chee H. ; Sandall, Ian C. ; Zhou, Xinxin.
MRS Advances.  1 (2016)  48 - p. 3301-3306 , 2016
Link: https://doi.org/10.1557/..
 
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14

InAs Diodes Fabricated Using Be Ion Implantation:

White, Benjamin S. ; Sandall, Ian C. ; David, John P. R..
IEEE Transactions on Electron Devices.  62 (2015)  9 - p. 2928-2932 , 2015
Link: https://doi.org/10.1109/..
 
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15

Temperature dependence of impact ionization in InAs: erratu:

Sandall, Ian C. ; Ng, Jo Shien ; Xie, Shiyu..
Optics Express.  22 (2014)  21 - p. 25923 , 2014
Link: https://doi.org/10.1364/..
 
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