Sandall, Ian C.
144  Ergebnisse:
Personensuche X
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2

InAs Diodes Fabricated Using Be Ion Implantation:

White, Benjamin S. ; Sandall, Ian C. ; David, John P. R..
IEEE Transactions on Electron Devices.  62 (2015)  9 - p. 2928-2932 , 2015
 
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7

Hole density and acceptor-type defects in MBE-grown GaSb1-x..:

Segercrantz, N ; Slotte, J ; Makkonen, I...
Journal of Physics D: Applied Physics.  50 (2017)  29 - p. 295102 , 2017
 
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12

Gain in p-doped quantum dot lasers:

Smowton, P. M. ; Sandall, I. C. ; Liu, H. Y..
Journal of Applied Physics.  101 (2007)  1 - p. , 2007
 
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13

Auger Recombination is NOT Necessary to Explain the Tempera..:

, In: 2006 IEEE 20th International Semiconductor Laser Conference, 2006. Conference Digest.,
Smowton, P.M. ; Sandall, I.C. ; Thomson, J.D.... - p. 155-156 , 2006
 
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15

Kinetics of Removal of Carbonyl Sulfide by Aqueous Monoetha..:

Lee, Sang Cheol ; Snodgrass, Michael J. ; Park, Moon Ki.
Environmental Science & Technology.  35 (2001)  11 - p. 2352-2357 , 2001
 
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