Sandupatla, A.
41  Ergebnisse:
Personensuche X
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1

Improved interface state density by low temperature epitaxy..:

Whiteside, M. ; Arulkumaran, S. ; Dikme, Y...
Materials Science and Engineering: B.  262 (2020)  - p. 114707 , 2020
 
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2

Low interface trap density in AlGaN/GaN Metal-Insulator-Sem..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Ranjan, K. ; Arulkumaran, S. ; Ng, G. I.. - p. 1-4 , 2020
 
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3

Low leakage Mg-compensated GaN Schottky diodes on free-stan..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Sandupatla, A. ; Arulkumaran, S. ; Ranjan, K.... - p. 1-4 , 2020
 
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4

Investigation of Self-Heating Effect on DC and RF Performan..:

Ranjan, K. ; Arulkumaran, S. ; Ng, G. I..
IEEE Journal of the Electron Devices Society.  7 (2019)  - p. 1264-1269 , 2019
 
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6

Synthesis and catalytic activity of a Pd doped Ni–MgO catal..:

Singha, R. K. ; Shukla, A. ; Sandupatla, A...
Journal of Materials Chemistry A.  5 (2017)  30 - p. 15688-15699 , 2017
 
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8

Solutions To Improve HBM ESD Robustness of GaN RF HEMTs:

, In: 2023 45th Annual EOS/ESD Symposium (EOS/ESD),
 
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