E-LIB Suche - Ergebnisse für: Santi C

1

On-Wafer Dynamic Operation of Power GaN-HEMTs: Degradation ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Boito, M. ; Fregolent, M. ; De Santi, C.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

2

Threshold Voltage Drift and Recovery of SiC Trench MOSFETs ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Avramenko, M. ; De Schepper, L. ; Cano, J.-F.... - p. P54.SiC-1-P54.SiC-4 , 2024

Link: https://doi.org/10.1109/..

3

Role of Gate Hole Injection in Minimizing Substrate Couplin..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Cavaliere, A. ; De Santi, C. ; Meneghesso, G... - p. P17.GaN-1-P17.GaN-4 , 2024

Link: https://doi.org/10.1109/..

4

Review and Outlook on GaN and SiC Power Devices: Industrial..:

Buffolo, M. ; Favero, D. ; Marcuzzi, A....
IEEE Transactions on Electron Devices. 71 (2024) 3 - p. 1344-1355 , 2024

Link: https://doi.org/10.1109/..

5

Origin and Recovery of Negative VTH Shift on 4H–SiC MOS Cap..:

Marcuzzi, A. ; Avramenko, M. ; De Santi, C....
Materials Science in Semiconductor Processing. 177 (2024) - p. 108389 , 2024

Link: https://doi.org/10.1016/..

6

$\mathrm{R}_{\text{ON}}$ and $\mathrm{V}_{\text{TH}}$ Extra..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Favero, D. ; De Santi, C. ; Stockman, A.... - p. 1-4 , 2024

Link: https://doi.org/10.1109/..

7

Charge Trapping in SiC MOSFETs under Constant Gate Current ..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Marcuzzi, A. ; Avramenko, M. ; De Santi, C.... - p. 1-5 , 2024

Link: https://doi.org/10.1109/..

8

Early failure of high-power white LEDs for outdoor applicat..:

Caria, A. ; Fraccaroli, R. ; Pierobon, G....
Microelectronics Reliability. 150 (2023) - p. 115142 , 2023

Link: https://doi.org/10.1016/..

9

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means ..:

Piva, F. ; Pilati, M. ; Buffolo, M....
Applied Physics Letters. 122 (2023) 18 - p. , 2023

Link: https://doi.org/10.1063/..

10

High- Temperature PBTI in Trench-Gate Vertical GaN Power MO..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),

Favero, D. ; Cavaliere, A. ; De Santi, C.... - p. 1-6 , 2023

Link: https://doi.org/10.1109/..

11

Bias-dependent degradation of single quantum well on InGaN-..:

Casu, C. ; Buffolo, M. ; Caria, A....
Microelectronics Reliability. 150 (2023) - p. 115132 , 2023

Link: https://doi.org/10.1016/..

12

A novel in-situ approach to monitor the variations in the o..:

Cavaliere, A. ; De Santi, C. ; Meneghesso, G...
Microelectronics Reliability. 150 (2023) - p. 115199 , 2023

Link: https://doi.org/10.1016/..

13

Trade-off between gate leakage current and threshold voltag..:

Favero, D. ; De Santi, C. ; Stockman, A....
Microelectronics Reliability. 150 (2023) - p. 115129 , 2023

Link: https://doi.org/10.1016/..

14

GaN-on-Si Power HEMTs for Automotive: Current Status and Pe..:

, In: 2023 AEIT International Conference on Electrical and Electronic Technologies for Automotive (AEIT AUTOMOTIVE),

Favero, D. ; Marcuzzi, A. ; De Santi, C.... - p. 1-6 , 2023

Link: https://doi.org/10.23919..

15

Screening medical students for SARS-CoV-2 to facilitate fac..:

De Santi, C. ; Cavalleri, G.L. ; Kerrigan, S.W....
Journal of Hospital Infection. 135 (2023) - p. 1-3 , 2023

Link: https://doi.org/10.1016/..