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X
Saxler, A.
136  Ergebnisse:
Personensuche X
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1

Study of the effects of an AlN interlayer on the transport ..:

Elhamri, S. ; Mitchel, W. C. ; Mitchell, W. D....
Applied Physics Letters.  90 (2007)  4 - p. , 2007
Link: https://doi.org/10.1063/..
 
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2

Time-domain measurements of surface plasmon polaritons in t..:

Saxler, J. ; Gómez Rivas, J. ; Janke, C....
Physical Review B.  69 (2004)  15 - p. , 2004
Link: https://doi.org/10.1103/..
 
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3

Study of deleterious aging effects in GaN/AlGaN heterostruc..:

Elhamri, S. ; Saxler, A. ; Mitchel, W. C....
Journal of Applied Physics.  93 (2003)  2 - p. 1079-1082 , 2003
Link: https://doi.org/10.1063/..
 
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4

Emission and reflection spectra from AlxGa1−xN/GaN single h..:

Reynolds, D. C. ; Hoelscher, J. ; Litton, C. W....
Journal of Applied Physics.  94 (2003)  7 - p. 4263-4266 , 2003
Link: https://doi.org/10.1063/..
 
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5

Electronic properties of heteroepitaxial undoped and n-InSb..:

Rawdanowicz, T. A. ; Iyer, S. ; Mitchel, W. C...
Journal of Applied Physics.  92 (2002)  1 - p. 296-301 , 2002
Link: https://doi.org/10.1063/..
 
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6

Characterization of deep centers in bulk n-type 4H–SiC:

Fang, Z-Q. ; Look, D.C. ; Saxler, A..
Physica B: Condensed Matter.  308-310 (2001)  - p. 706-709 , 2001
Link: https://doi.org/10.1016/..
 
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7

InAs/InGaSb photodetectors grown on GaAs bonded substrates:

Vilela, M. F. ; Anselm, K. A. ; Sooriar, N....
Journal of Electronic Materials.  30 (2001)  7 - p. 798-801 , 2001
Link: https://doi.org/10.1007/..
 
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8

EPR and photoluminescence studies of semi-insulating 4H-SiC..:

Kalabukhova, E.N. ; Lukin, S.N. ; Mitchel, W.C...
Physica B: Condensed Matter.  308-310 (2001)  - p. 698-701 , 2001
Link: https://doi.org/10.1016/..
 
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9

High mobility in n-type GaN substrates:

Saxler, A. ; Look, D. C. ; Elhamri, S....
Applied Physics Letters.  78 (2001)  13 - p. 1873-1875 , 2001
Link: https://doi.org/10.1063/..
 
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10

Heavy doping effects in Mg-doped GaN:

Kozodoy, Peter ; Xing, Huili ; DenBaars, Steven P....
Journal of Applied Physics.  87 (2000)  4 - p. 1832-1835 , 2000
Link: https://doi.org/10.1063/..
 
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11

Characterization of an AlGaN/GaN two-dimensional electron g..:

Saxler, A. ; Debray, P. ; Perrin, R....
Journal of Applied Physics.  87 (2000)  1 - p. 369-374 , 2000
Link: https://doi.org/10.1063/..
 
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12

Dissociation of Al2O3(0001) substrates and the roles of sil..:

Van Nostrand, J. E. ; Solomon, J. ; Saxler, A....
Journal of Applied Physics.  87 (2000)  12 - p. 8766-8772 , 2000
Link: https://doi.org/10.1063/..
 
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13

Persistent photoconductivity study in a high mobility AlGaN..:

Elhamri, S. ; Saxler, A. ; Mitchel, W. C....
Journal of Applied Physics.  88 (2000)  11 - p. 6583-6588 , 2000
Link: https://doi.org/10.1063/..
 
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14

Ionization energies and electron mobilities in phosphorus- ..:

Capano, M. A. ; Cooper Jr., J. A. ; Melloch, M. R...
Journal of Applied Physics.  87 (2000)  12 - p. 8773-8777 , 2000
Link: https://doi.org/10.1063/..
 
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15

Phase-matched optical second-harmonic generation in GaN and..:

Hahn, D. N. ; Kiehne, G. T. ; Ketterson, J. B....
Journal of Applied Physics.  85 (1999)  5 - p. 2497-2501 , 1999
Link: https://doi.org/10.1063/..
 
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