E-LIB Suche - Ergebnisse für: Schöner, Adolf

1

Tailoring the Charge Carrier Lifetime Distribution of 10 kV..:

Yuan, Zimo ; Schöner, Adolf ; Reshanov, Sergey...
Key Engineering Materials. 946 (2023) - p. 119-124 , 2023

Link: https://doi.org/10.4028/..

2

Development of 3C-SiC MOSFETs:

Bakowski, Mietek ; Schöner, Adolf ; Ericsson, Per...
Journal of Telecommunications and Information Technology. , 2023

Link: https://doi.org/10.26636..

3

Localized Lifetime Control of 10 kV 4H-SiC PiN Diodes by Me..:

Yuan, Zimo ; Jacobs, Keijo ; Bakowski, Mietek...
Materials Science Forum. 1062 (2022) - p. 442-446 , 2022

Link: https://doi.org/10.4028/..

4

Determination of failure degree of 1.2 kV SiC MOSFETs after..:

Diao, Shen ; Sun, Jun ; Zhou, Ziwei...
Nanotechnology and Precision Engineering. 3 (2020) 4 - p. 235-240 , 2020

Link: https://doi.org/10.1016/..

5

Modelling the static on-state current voltage characteristi..:

Tian, Kai ; Xia, Jinghua ; Elgammal, Karim...
Materials Science in Semiconductor Processing. 115 (2020) - p. 105097 , 2020

Link: https://doi.org/10.1016/..

6

Optimization of SiC Power p-i-n Diode Parameters by Proton ..:

Hazdra, Pavel ; Popelka, Stanislav ; Schoner, Adolf
IEEE Transactions on Electron Devices. 65 (2018) 10 - p. 4483-4489 , 2018

Link: https://doi.org/10.1109/..

7

30 kV Pulse Diode Stack Based on 4H-SiC:

Ilyin, Vladimir A. ; Afanasyev, Alexey V. ; Demin, Yuri S....
Materials Science Forum. 924 (2018) - p. 841-844 , 2018

Link: https://doi.org/10.4028/..

8

Local Lifetime Control in 4H-SiC by Proton Irradiation:

Hazdra, Pavel ; Popelka, Stanislav ; Schöner, Adolf
Materials Science Forum. 924 (2018) - p. 436-439 , 2018

Link: https://doi.org/10.4028/..

9

3C-SiС Hetero-Epitaxially Grown on Silicon Compliance Subst..:

La Via, Francesco ; Roccaforte, Fabrizio ; La Magna, Antonino...
Materials Science Forum. 924 (2018) - p. 913-918 , 2018

Link: https://doi.org/10.4028/..

10

Effect of Neutron Irradiation on Epitaxial 4H-SiC PiN UV-Ph..:

Afanasyev, Alexey V. ; Ilyin, Vladimir A. ; Luchinin, Victor V....
Materials Science Forum. 897 (2017) - p. 614-617 , 2017

Link: https://doi.org/10.4028/..

11

Design Optimization of a High Temperature 1.2 kV 4H-SiC Bur..:

Elahipanah, Hossein ; Thierry-Jebali, Nicolas ; Reshanov, Sergey A....
Materials Science Forum. 897 (2017) - p. 455-458 , 2017

Link: https://doi.org/10.4028/..

12

3C-SiC Epitaxy on Deeply Patterned Si(111) Substrates:

Kreiliger, Thomas ; Mauceri, Marco ; Puglisi, Marco...
Materials Science Forum. 858 (2016) - p. 151-154 , 2016

Link: https://doi.org/10.4028/..

13

Junction Barrier Schottky (JBS) Rectifier Interface Enginee..:

ROSSMANN, Harald ; Gysin, Urs ; Bubendorf, Alexander...
Materials Science Forum. 858 (2016) - p. 497-500 , 2016

Link: https://doi.org/10.4028/..

14

High-Voltage Ultra-Fast Pulse Diode Stack Based on 4H-SiC:

Ilyin, Vladimir A. ; Afanasyev, Alexey V. ; Ivanov, Boris V....
Materials Science Forum. 858 (2016) - p. 786-789 , 2016

Link: https://doi.org/10.4028/..

15

Tailoring the 4H-SiC/SiO2 MOS-interface for SiC-based power..:

Mikhaylov, Aleksey I. ; Afanasyev, Alexey V. ; Luchinin, Victor V....
Japanese Journal of Applied Physics. 55 (2016) 8S2 - p. 08PC04 , 2016

Link: https://doi.org/10.7567/..