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X
Scheffer, F.
1722  Ergebnisse:
Personensuche X
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1

Evidence of type-II band alignment at the ordered GaInP to ..:

Liu, Q. ; Derksen, S. ; Lindner, A....
Journal of Applied Physics.  77 (1995)  3 - p. 1154-1158 , 1995
Link: https://doi.org/10.1063/..
 
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2

Metalorganic vapor phase epitaxial grown heterointerfaces t..:

Prost, W. ; Scheffer, F. ; Liu, Q....
Journal of Crystal Growth.  146 (1995)  1-4 - p. 538-543 , 1995
Link: https://doi.org/10.1016/..
 
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3

X-ray diffraction characterization of highly strained InAs ..:

Liu, Q. ; Lindner, A. ; Scheffer, F...
Journal of Applied Physics.  75 (1994)  5 - p. 2426-2433 , 1994
Link: https://doi.org/10.1063/..
 
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4

Low-pressure metalorganic vapour phase epitaxy growth of In..:

Lindner, A. ; Liu, Q. ; Scheffer, F....
Journal of Crystal Growth.  145 (1994)  1-4 - p. 771-777 , 1994
Link: https://doi.org/10.1016/..
 
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5

X-ray characterization of very thin layers grown on InP:

Liu, Q. ; Scheffer, F. ; Lindner, A....
Materials Science and Engineering: B.  28 (1994)  1-3 - p. 188-192 , 1994
Link: https://doi.org/10.1016/..
 
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6

Highly strained In0.5Ga0.5P as wide-gap material on InP sub..:

Scheffer, F. ; Lindner, A. ; Liu, Q....
Journal of Crystal Growth.  145 (1994)  1-4 - p. 326-331 , 1994
Link: https://doi.org/10.1016/..
 
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7

Analysis of ordering in GaInP by means of x-ray diffraction:

Liu, Q. ; Lakner, H. ; Scheffer, F...
Journal of Applied Physics.  73 (1993)  6 - p. 2770-2774 , 1993
Link: https://doi.org/10.1063/..
 
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8

Effects of deep levels and Si-doping on GaInP material prop..:

Liu, Q. ; Quedeweit, U. ; Scheffer, F....
Materials Science and Engineering: B.  21 (1993)  2-3 - p. 181-184 , 1993
Link: https://doi.org/10.1016/..
 
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9

High doping performance of lattice matched GaInP on GaAs:

Scheffer, F. ; Buchali, F. ; Lindner, A....
Journal of Crystal Growth.  124 (1992)  1-4 - p. 475-482 , 1992
Link: https://doi.org/10.1016/..
 
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10

Characterization of MOVPE grown GaInP as wide band gap Scho..:

, In: LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels,
Scheffer, F. ; Buchali, F. ; Lindner, A.... - p. 538,539,540,541 , 1992
Link: https://doi.org/10.1109/..
 
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11

Growth and characterization of AlGaAs/GaAs Bragg reflectors..:

Scheffer, F. ; Joseph, M. ; Prost, W....
Materials Science and Engineering: B.  9 (1991)  1-3 - p. 361-364 , 1991
Link: https://doi.org/10.1016/..
 
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12

Ultralow doping profiles for applications in 3D integrated ..:

Gyuro, I. ; Scheffer, F. ; Joseph, M....
Journal of Crystal Growth.  107 (1991)  1-4 - p. 956-959 , 1991
Link: https://doi.org/10.1016/..
 
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13

Optical and electrical properties of the AlxGa1−xAs/GaAs si..:

Guimar∼aes, F.E.G. ; Gyuro, I. ; Scheffer, F...
Journal of Crystal Growth.  107 (1991)  1-4 - p. 434-439 , 1991
Link: https://doi.org/10.1016/..
 
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14

Scanning transmission electron microscopy of heterointerfac..:

Lakner, H. ; Bollig, B. ; Kubalek, E....
Journal of Crystal Growth.  107 (1991)  1-4 - p. 452-457 , 1991
Link: https://doi.org/10.1016/..
 
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15

Thermal activation in the quantum regime and macroscopic qu..:

Bol, D.W. ; Scheffer, J.J.F. ; Giele, W.T..
Physica B+C.  133 (1985)  2-3 - p. 196-209 , 1985
Link: https://doi.org/10.1016/..
 
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