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Seabaugh, Alan C.
106  Ergebnisse:
Personensuche X
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1

Electrical Properties of 6 nm to 19 nm Thick Polyethylene O..:

Gonzalez-Serrano, Karla Adriana ; Seabaugh, Alan C.
Journal of Electronic Materials.  50 (2021)  6 - p. 2956-2963 , 2021
Link: https://doi.org/10.1007/..
 
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2

Electric-double-layer p–i–n junctions in WSe2:

Fathipour, Sara ; Paletti, Paolo ; Fullerton-Shirey, Susan K..
Scientific Reports.  10 (2020)  1 - p. , 2020
Link: https://doi.org/10.1038/..
 
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3

A device non-ideality resilient approach for mapping neural..:

, In: Proceedings of the 57th ACM/EDAC/IEEE Design Automation Conference,
Kazemi, Arman ; Alessandri, Cristobal ; Seabaugh, Alan C.... - p. 1-6 , 2020
Link: https://dl.acm.org/doi/1..
 
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4

A Device Non-Ideality Resilient Approach for Mapping Neural..:

, In: 2020 57th ACM/IEEE Design Automation Conference (DAC),
Kazemi, Arman ; Alessandri, Cristobal ; Seabaugh, Alan C.... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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5

Process Dependent Switching Dynamics of Ferroelectric Hafni..:

, In: 2019 Device Research Conference (DRC),
Pandey, Pratyush ; Alessandri, Cristobal ; Seabaugh, Alan C. - p. 49-50 , 2019
Link: https://doi.org/10.1109/..
 
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6

Pulse Dynamics of Electric Double Layer Formation on All-So..:

Xu, Ke ; Islam, Md Mahbubul ; Guzman, David...
ACS Applied Materials & Interfaces.  10 (2018)  49 - p. 43166-43176 , 2018
Link: https://doi.org/10.1021/..
 
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7

Electric Double Layer Dynamics in Poly(ethylene oxide) LiCl..:

Li, Hua-Min ; Xu, Ke ; Bourdon, Buchanan...
The Journal of Physical Chemistry C.  121 (2017)  31 - p. 16996-17004 , 2017
Link: https://doi.org/10.1021/..
 
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8

Reconfigurable Ion Gating of 2H-MoTe2 Field-Effect Transist..:

Xu, Huilong ; Fathipour, Sara ; Kinder, Erich W...
ACS Nano.  9 (2015)  5 - p. 4900-4910 , 2015
Link: https://doi.org/10.1021/..
 
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9

Graphene as transparent electrode for direct observation of..:

Yan, Rusen ; Zhang, Qin ; Kirillov, Oleg A....
Applied Physics Letters.  102 (2013)  12 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Tunnel field-effect transistor heterojunction band alignmen..:

Zhang, Qin ; Zhou, Guangle ; Xing, Huili G....
Applied Physics Letters.  100 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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11

Direct Measurement of Dirac Point Energy at the Graphene/Ox..:

Xu, Kun ; Zeng, Caifu ; Zhang, Qin...
Nano Letters.  13 (2012)  1 - p. 131-136 , 2012
Link: https://doi.org/10.1021/..
 
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12

Influence of Fe2O3 Nanofiller Shape on the Conductivity and..:

Do, Nhu Suong T. ; Schaetzl, Dean M. ; Dey, Barnali..
The Journal of Physical Chemistry C.  116 (2012)  40 - p. 21216-21223 , 2012
Link: https://doi.org/10.1021/..
 
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13

Transport properties of graphene nanoribbon transistors on ..:

Hwang, Wan Sik ; Tahy, Kristof ; Li, Xuesong...
Applied Physics Letters.  100 (2012)  20 - p. , 2012
Link: https://doi.org/10.1063/..
 
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14

Si resonant interband tunnel diodes grown by low-temperatur..:

Thompson, Phillip E. ; Hobart, Karl D. ; Twigg, Mark E....
Applied Physics Letters.  75 (1999)  9 - p. 1308-1310 , 1999
Link: https://doi.org/10.1063/..
 
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15

Room temperature operation of epitaxially grown Si/Si0.5Ge0..:

Rommel, Sean L. ; Dillon, Thomas E. ; Dashiell, M. W....
Applied Physics Letters.  73 (1998)  15 - p. 2191-2193 , 1998
Link: https://doi.org/10.1063/..
 
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