E-LIB Suche - Ergebnisse für: Segercrantz, N

1

ZnO1−xTex highly mismatched alloys beyond the dilute alloy ..:

Ting, M. ; Yu, K. M. ; Jaquez, M....
Journal of Applied Physics. 125 (2019) 15 - p. , 2019

Link: https://doi.org/10.1063/..

2

Hole density and acceptor-type defects in MBE-grown GaSb1-x..:

Segercrantz, N ; Slotte, J ; Makkonen, I...
Journal of Physics D: Applied Physics. 50 (2017) 29 - p. 295102 , 2017

Link: https://doi.org/10.1088/..

3

Undoped p-type GaN1–xSbx alloys: Effects of annealing:

Segercrantz, N. ; Baumgartner, Y. ; Ting, M....
Applied Physics Letters. 109 (2016) 25 - p. , 2016

Link: https://doi.org/10.1063/..

4

Highly mismatched GaN1−xSbxalloys: synthesis, structure and..:

Yu, K M ; Sarney, W L ; Novikov, S V...
Semiconductor Science and Technology. 31 (2016) 8 - p. 083001 , 2016

Link: https://doi.org/10.1088/..

5

The influence of nitrogen and antimony on the optical quali..:

Latkowska, M ; Baranowski, M ; Linhart, W M...
Journal of Physics D: Applied Physics. 49 (2016) 11 - p. 115105 , 2016

Link: https://doi.org/10.1088/..

6

Electronic band structure of highly mismatched GaN1−xSbx al..:

Segercrantz, N. ; Yu, K. M. ; Ting, M....
Applied Physics Letters. 107 (2015) 14 - p. , 2015

Link: https://doi.org/10.1063/..

7

Increased p-type conductivity in GaNxSb1−x, experimental an..:

Segercrantz, N. ; Makkonen, I. ; Slotte, J....
Journal of Applied Physics. 118 (2015) 8 - p. , 2015

Link: https://doi.org/10.1063/..

8

Charge transition level of GePb1 centers at interfaces of S..:

Madia, O. ; Segercrantz, N. ; Afanas'ev, V....
physica status solidi (b). 251 (2014) 11 - p. 2211-2215 , 2014

Link: https://doi.org/10.1002/..

9

Native point defects in GaSb:

Kujala, J. ; Segercrantz, N. ; Tuomisto, F..
Journal of Applied Physics. 116 (2014) 14 - p. , 2014

Link: https://doi.org/10.1063/..

10

Point defect balance in epitaxial GaSb:

Segercrantz, N. ; Slotte, J. ; Makkonen, I....
Applied Physics Letters. 105 (2014) 8 - p. , 2014

Link: https://doi.org/10.1063/..

11

Publisher's Note: "Point defect balance in epitaxial GaSb" ..:

Segercrantz, N. ; Slotte, J. ; Makkonen, I....
Applied Physics Letters. 105 (2014) 16 - p. , 2014

Link: https://doi.org/10.1063/..

12

ZnO 1-x Te x highly mismatched alloys beyond the dilute all..:

Ting, M ; Yu, K. M ; Jaquez, M...
Journal of Applied Physics. , 2019

Link: https://aaltodoc.aalto.f..

13

Instability of the Sb vacancy in GaSb:

Segercrantz, N ; Slotte, J ; Tuomisto, F..
10.1103/PhysRevB.95.184103. , 2017

Link: http://hdl.handle.net/10..

14

Instability of the Sb vacancy in GaSb:

Segercrantz, N ; Slotte, J ; Tuomisto, F..
PHYSICAL REVIEW B. , 2017

Link: https://aaltodoc.aalto.f..

15

Hole density and acceptor-type defects in MBE-grown GaSb1-x..:

Segercrantz, N ; Slotte, J ; Makkonen, I...
Journal of Physics D: Applied Physics. , 2017

Link: https://aaltodoc.aalto.f..