E-LIB Suche - Ergebnisse für: Serafińczuk, J.

1

Thickness and Mg doping of graded AlGaN layers: Influence o..:

Majchrzak, D. ; Tran, L.M. ; Babij, M....
Materials Science in Semiconductor Processing. 178 (2024) - p. 108452 , 2024

Link: https://doi.org/10.1016/..

2

Dislocation density as a factor compensating the polarizati..:

Majchrzak, D. ; Tran, L.M. ; Babij, M....
Journal of Alloys and Compounds. 985 (2024) - p. 174034 , 2024

Link: https://doi.org/10.1016/..

3

High-resolution X-ray diffraction to probe quantum dot asym..:

Serafińczuk, J. ; Rudno-Rudziński, W. ; Gawełczyk, M....
Measurement. 221 (2023) - p. 113451 , 2023

Link: https://doi.org/10.1016/..

4

X-ray diffraction studies of residual strain in AlN/sapphir..:

Serafinczuk, J. ; Pawlaczyk, L. ; Moszak, K....
Measurement. 200 (2022) - p. 111611 , 2022

Link: https://doi.org/10.1016/..

5

Fast and efficient approach for multi-component quantum wel..:

Pawlaczyk, L. ; Pucicki, D. ; Serafinczuk, J.
Measurement. 186 (2021) - p. 110118 , 2021

Link: https://doi.org/10.1016/..

6

Growth and properties of the GaN cap layer strongly influen..:

Moszak, K. ; Pucicki, D. ; Grodzicki, M....
Materials Science in Semiconductor Processing. 136 (2021) - p. 106125 , 2021

Link: https://doi.org/10.1016/..

7

Boron influence on bandgap and photoluminescence in BGaN gr..:

Zdanowicz, E. ; Iida, D. ; Pawlaczyk, L....
Journal of Applied Physics. 127 (2020) 16 - p. , 2020

Link: https://doi.org/10.1063/..

8

Anisotropic thermal conductivity of AlGaN/GaN superlattices:

Filatova-Zalewska, A ; Litwicki, Z ; Moszak, K...
Nanotechnology. 32 (2020) 7 - p. 075707 , 2020

Link: https://doi.org/10.1088/..

9

As-related stability of the band gap temperature dependence..:

Zdanowicz, E. ; Ciechanowicz, P. ; Opolczynska, K....
Applied Physics Letters. 115 (2019) 9 - p. , 2019

Link: https://doi.org/10.1063/..

10

Verification of threading dislocations density estimation m..:

Moszak, K. ; Olszewski, W. ; Pucicki, D....
Journal of Applied Physics. 126 (2019) 16 - p. , 2019

Link: https://doi.org/10.1063/..

11

Ga2O3 nanowires preparation at atmospheric pressure:

Korbutowicz, R. ; Stafiniak, A. ; Serafińczuk, J.
Materials Science-Poland. 35 (2017) 2 - p. 412-420 , 2017

Link: https://doi.org/10.1515/..

12

Electronic band structure of compressively strained Ge1−xSn..:

Zelazna, K. ; Polak, M. P. ; Scharoch, P....
Applied Physics Letters. 106 (2015) 14 - p. , 2015

Link: https://doi.org/10.1063/..

13

Ammonothermal growth of GaN crystals on HVPE-GaN seeds prep..:

Kucharski, R. ; Zajac, M. ; Puchalski, A....
Journal of Crystal Growth. 427 (2015) - p. 1-6 , 2015

Link: https://doi.org/10.1016/..

14

Anisotropy of strain relaxation in heterogeneous GaInNAs la..:

Gelczuk, Ł. ; Pucicki, D. ; Serafińczuk, J...
Journal of Crystal Growth. 430 (2015) - p. 14-20 , 2015

Link: https://doi.org/10.1016/..

15

Optical properties of Tb and Eu doped cubic YAlO3 phosphors..:

Zatryb, G. ; Podhorodecki, A. ; Serafińczuk, J....
Optical Materials. 35 (2013) 12 - p. 2090-2094 , 2013

Link: https://doi.org/10.1016/..