Ich stimme zu, dass diese Seite Cookies verwende. Weitere Informationen finden Sie unter unseren Datenschutzerklärungen .
X
Shanker, Nirmaan
17  Ergebnisse:
Personensuche X
?
1

Boost in Carrier Velocity Due to Electrostatic Effects of N..:

Garg, Chirag ; Cheema, Suraj ; Shanker, Nirmaan...
IEEE Electron Device Letters.  45 (2024)  3 - p. 460-463 , 2024
Link: https://doi.org/10.1109/..
 
?
2

Giant energy storage and power density negative capacitance..:

Cheema, Suraj S. ; Shanker, Nirmaan ; Hsu, Shang-Lin...
Nature.  629 (2024)  8013 - p. 803-809 , 2024
Link: https://doi.org/10.1038/..
 
?
3

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for adv..:

Cheema, Suraj S. ; Shanker, Nirmaan ; Wang, Li-Chen...
Nature.  604 (2022)  7904 - p. 65-71 , 2022
Link: https://doi.org/10.1038/..
 
?
4

Emergent ferroelectricity in subnanometer binary oxide film..:

Cheema, Suraj S. ; Shanker, Nirmaan ; Hsu, Shang-Lin...
Science.  376 (2022)  6593 - p. 648-652 , 2022
Link: https://doi.org/10.1126/..
 
?
5

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on ..:

Cheema, Suraj S. ; Shanker, Nirmaan ; Hsu, Cheng‐Hsiang...
Advanced Electronic Materials.  8 (2022)  6 - p. , 2022
Link: https://doi.org/10.1002/..
 
?
6

On the PBTI Reliability of Low EOT Negative Capacitance 1.8..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Shanker, Nirmaan ; Wang, Li-Chen ; Cheema, Suraj... - p. 421-422 , 2022
Link: https://doi.org/10.1109/..
 
?
7

Write Disturb-Free Ferroelectric FETs With Non-Accumulative..:

Hoffmann, Michael ; Tan, Ava Jiang ; Shanker, Nirmaan...
IEEE Electron Device Letters.  43 (2022)  12 - p. 2097-2100 , 2022
Link: https://doi.org/10.1109/..
 
?
8

FeFETs for Near-Memory and In-Memory Compute:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Salahuddin, Saveef ; Tan, Ava ; Cheema, Suraj... - p. 19.4.1-19.4.4 , 2021
Link: https://doi.org/10.1109/..
 
?
9

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on ..:

Cheema, Suraj S. ; Shanker, Nirmaan ; Hsu, Cheng‐Hsiang...
Advanced Electronic Materials.  8 (2021)  6 - p. , 2021
Link: https://doi.org/10.1002/..
 
?
10

Publisher Correction: Enhanced ferroelectricity in ultrathi..:

Cheema, Suraj S. ; Kwon, Daewoong ; Shanker, Nirmaan...
Nature.  581 (2020)  7808 - p. E5-E5 , 2020
Link: https://doi.org/10.1038/..
 
?
11

Enhanced ferroelectricity in ultrathin films grown directly..:

Cheema, Suraj S. ; Kwon, Daewoong ; Shanker, Nirmaan...
Nature.  580 (2020)  7804 - p. 478-482 , 2020
Link: https://doi.org/10.1038/..
 
?
12

One Nanometer HfO2‐Based Ferroelectric Tunnel Junctions on ..:

Cheema, Suraj S ; Shanker, Nirmaan ; Hsu, Cheng‐Hsiang...
qt9068914v.  , 2022
Link: https://escholarship.org..
 
?
13

Ultrathin ferroic HfO2–ZrO2 superlattice gate stack for adv..:

Cheema, Suraj S ; Shanker, Nirmaan ; Wang, Li-Chen...
qt18h3f02f.  , 2022
Link: https://escholarship.org..
 
?
14

Emergent ferroelectricity in subnanometer binary oxide film..:

Cheema, Suraj S ; Shanker, Nirmaan ; Hsu, Shang-Lin...
qt6zv0w891.  , 2022
Link: https://escholarship.org..
 
?
15

Ultrathin ferroic HfO2-ZrO2 superlattice gate stack for adv..:

Cheema, Suraj ; Shanker, Nirmaan
doi:10.5281/zenodo.5797030.  , 2021
Link: https://zenodo.org/recor..
 
1-15