E-LIB Suche - Ergebnisse für: Shchemerov, I.V.

1

Trap states and carrier diffusion lengths in NiO/β-Ga2O3 he..:

Polyakov, A. Y. ; Yakimov, E. B. ; Saranin, D. S....
Journal of Applied Physics. 135 (2024) 16 - p. , 2024

2

HVPE Growth and Characterization of Thick κ-Ga2O3 layers on..:

Stepanov, S. I. ; Nikolaev, V. I. ; Polyakov, A. Y....
ECS Journal of Solid State Science and Technology. 12 (2023) 1 - p. 015002 , 2023

Link: https://doi.org/10.1149/..

3

Two-dimensional hole gas formation at the κ-Ga2O3 /AlN hete..:

Polyakov, A.Y. ; Nikolaev, V.I. ; Pechnikov, A.I....
Journal of Alloys and Compounds. 936 (2023) - p. 168315 , 2023

Link: https://doi.org/10.1016/..

4

Tuning electrical properties in Ga2O3 polymorphs induced wi..:

Polyakov, A. Y. ; Kochkova, А. I. ; Azarov, A....
Journal of Applied Physics. 133 (2023) 9 - p. , 2023

Link: https://doi.org/10.1063/..

5

The effects of hydrogenation on the properties of heavy ion..:

Polyakov, A. Y. ; Kuznetsov, A. ; Azarov, A....
Journal of Materials Science: Materials in Electronics. 34 (2023) 15 - p. , 2023

Link: https://doi.org/10.1007/..

6

Electron Beam Induced Current Study of Photocurrent Gain in..:

Yakimov, E. B. ; Nikolaev, V. I. ; Pechnikov, A. I....
ECS Journal of Solid State Science and Technology. 12 (2023) 4 - p. 044009 , 2023

Link: https://doi.org/10.1149/..

7

Mechanism for Long Photocurrent Time Constants in α-Ga2O3 U..:

Polyakov, A. Y. ; Almaev, A. V. ; Nikolaev, V. I....
ECS Journal of Solid State Science and Technology. 12 (2023) 4 - p. 045002 , 2023

Link: https://doi.org/10.1149/..

8

Conducting surface layers formed by hydrogenation of O-impl..:

Polyakov, A.Y. ; Vasilev, A.A. ; Shchemerov, I.V....
Journal of Alloys and Compounds. 945 (2023) - p. 169258 , 2023

Link: https://doi.org/10.1016/..

9

Carrier removal rates in 1.1 MeV proton irradiated α-Ga2O3 ..:

Polyakov, A Y ; Nikolaev, V I ; Pechnikov, A I...
Journal of Physics D: Applied Physics. 56 (2023) 30 - p. 305103 , 2023

Link: https://doi.org/10.1088/..

10

Radiation effect on the polymer-based capacitive relative h..:

Shchemerov, I.V. ; Legotin, S.A. ; Lagov, P.B....
Nuclear Engineering and Technology. 54 (2022) 8 - p. 2871-2876 , 2022

Link: https://doi.org/10.1016/..

11

Degradation by sidewall recombination centers in GaN blue m..:

Lee, In-Hwan ; Kim, Tae-Hwan ; Polyakov, A.Y....
Journal of Alloys and Compounds. 921 (2022) - p. 166072 , 2022

Link: https://doi.org/10.1016/..

12

Electrical and Structural Properties of Two-Inch Diameter (..:

Nikolaev, V. I. ; Polyakov, A. Y. ; Stepanov, S. I....
ECS Journal of Solid State Science and Technology. 11 (2022) 11 - p. 115002 , 2022

Link: https://doi.org/10.1149/..

13

Post dry etching treatment of nanopillar GaN/InGaN multi-qu..:

Polyakov, A.Y. ; Alexanyan, L.A. ; Skorikov, M.L....
Journal of Alloys and Compounds. 868 (2021) - p. 159211 , 2021

Link: https://doi.org/10.1016/..

14

1 GeV proton damage in β-Ga2O3:

Polyakov, A. Y. ; Shchemerov, I. V. ; Vasilev, A. A....
Journal of Applied Physics. 130 (2021) 18 - p. , 2021

Link: https://doi.org/10.1063/..

15

Crystal orientation dependence of deep level spectra in pro..:

Polyakov, A. Y. ; Smirnov, N. B. ; Shchemerov, I. V....
Journal of Applied Physics. 130 (2021) 3 - p. , 2021

Link: https://doi.org/10.1063/..