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Shen, Shyh-Chiang
331  Ergebnisse:
Personensuche X
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1

Guest Editorial: Special Issue on Wide and Ultrawide Band G..:

Meneghini, Matteo ; Ng, Geok Ing ; Medjdoub, Farid...
IEEE Transactions on Electron Devices.  71 (2024)  3 - p. 1340-1343 , 2024
Link: https://doi.org/10.1109/..
 
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2

Low Leakage and High Gain GaN p-i-n Avalanche Photodiode Wi..:

Xu, Zhiyu ; Detchprohm, Theeradetch ; Shen, Shyh-Chiang..
IEEE Transactions on Electron Devices.  71 (2024)  6 - p. 3761-3768 , 2024
Link: https://doi.org/10.1109/..
 
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3

8-inch GaN Power Transistor Technology Using a Si-compatibl..:

, In: 2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA),
Shen, Shyh-Chiang - p. 1-1 , 2024
Link: https://doi.org/10.1109/..
 
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4

Breakdown characteristics analysis of kV-class vertical GaN..:

Xu, Zhiyu ; Daeumer, Matthias A. ; Cho, Minkyu...
Journal of Applied Physics.  135 (2024)  20 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Non-planar growth of high Al-mole-fraction AlGaN on pattern..:

Ando, Yuto ; Mehnke, Frank ; Bouchard, Henri...
Journal of Crystal Growth.  607 (2023)  - p. 127100 , 2023
Link: https://doi.org/10.1016/..
 
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6

Ion-implanted Al0.6Ga0.4N deep-ultraviolet avalanche photod..:

Jeong, Hoon ; Cho, Minkyu ; Xu, Zhiyu...
Applied Physics Letters.  123 (2023)  12 - p. , 2023
Link: https://doi.org/10.1063/..
 
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7

Low-Temperature Geiger-Mode Characterization of a Gallium N..:

Jeong, Hoon ; Garzda, E. A. ; Ji, Mi-Hee...
IEEE Journal of Quantum Electronics.  59 (2023)  3 - p. 1-8 , 2023
Link: https://doi.org/10.1109/..
 
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8

1.2-kV Vertical GaN PIN Rectifier With Ion-Implanted Floati..:

Cho, Minkyu ; Xu, Zhiyu ; Bakhtiary-Noodeh, Marzieh...
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4578-4583 , 2023
Link: https://doi.org/10.1109/..
 
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9

Developing Physics-Based TCAD Model for AlGaN/GaN Power HEM..:

, In: 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia),
Cheng, Wei-Chih ; Lin, Po-Heng ; Lin, Chih-Hung... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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10

Realizing crack-free high-aluminum-mole-fraction AlGaN on p..:

Mehnke, Frank ; Fischer, Alec M. ; Xu, Zhiyu...
Journal of Applied Physics.  131 (2022)  7 - p. , 2022
Link: https://doi.org/10.1063/..
 
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11

Breakdown characteristics of deep-ultraviolet Al0.6Ga0.4N p..:

Jeong, Hoon ; Cho, Minkyu ; Xu, Zhiyu...
Journal of Applied Physics.  131 (2022)  10 - p. , 2022
Link: https://doi.org/10.1063/..
 
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12

High-Gain and Low-Dark Current GaN p-i-n Ultraviolet Avalan..:

Bakhtiary-Noodeh, Marzieh ; Cho, Minkyu ; Jeong, Hoon...
Journal of Electronic Materials.  50 (2021)  8 - p. 4462-4468 , 2021
Link: https://doi.org/10.1007/..
 
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13

Epitaxial Growth and Optically Pumped Stimulated Emission i..:

Chen, Ping ; Park, Young Jae ; Liu, Yuh-Shiuan...
Journal of Electronic Materials.  49 (2020)  4 - p. 2326-2331 , 2020
Link: https://doi.org/10.1007/..
 
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14

Design of Ion-Implanted Junction Termination Extension for ..:

Cho, Minkyu ; Xu, Zhiyu ; Bakhtiary-Noodeh, Marzieh...
ECS Transactions.  98 (2020)  6 - p. 49-59 , 2020
Link: https://doi.org/10.1149/..
 
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15

Extended Electrical and Photonic Characterization of GaN-Ba..:

Tsai, Yi-Lin ; Huang, Sheng-Kai ; Huang, Huang-Hsiung...
IEEE Photonics Journal.  12 (2020)  6 - p. 1-9 , 2020
Link: https://doi.org/10.1109/..
 
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