E-LIB Suche - Ergebnisse für: Shepeliavyi, P.E.

1

Polarized photoluminescence of nc-Si–SiO x nanostructures:

Michailovska, E. V. ; Indutnyi, I. Z. ; Shepeliavyi, P. E..
Semiconductors. 50 (2016) 1 - p. 97-102 , 2016

Link: https://doi.org/10.1134/..

2

Investigation of thermal sensitivity and radiation resistan..:

Shepeliavyi, P.E. ; Indutnyi, I.Z. ; Dan'ko, V.A...
Infrared Physics & Technology. 63 (2014) - p. 189-192 , 2014

Link: https://doi.org/10.1016/..

3

Distribution of CdSe nanoparticles synthesized in porous Si..:

Bacherikov, Yu. Yu. ; Indutnyi, I. Z. ; Okhrimenko, O. B....
Semiconductors. 45 (2011) 9 - p. 1189-1193 , 2011

Link: https://doi.org/10.1134/..

4

Visible photoluminescence of selectively etched porous nc-S..:

Indutnyi, I. Z. ; Michailovska, E. V. ; Shepeliavyi, P. E..
Semiconductors. 44 (2010) 2 - p. 206-210 , 2010

Link: https://doi.org/10.1134/..

5

Ellipsometric characterization of SiOx films with embedded ..:

Szekeres, A. ; Vlaikova, E. ; Lohner, T....
Vacuum. 84 (2009) 1 - p. 115-118 , 2009

Link: https://doi.org/10.1016/..

6

Effect of Si nanoparticles embedded in SiOx on optical prop..:

Szekeres, A. ; Nikolova, T. ; Paneva, A....
Optical Materials. 30 (2008) 7 - p. 1115-1120 , 2008

Link: https://doi.org/10.1016/..

7

Phase separation in SiOxfilms annealed under enhanced hydro..:

Rudko, G. Yu. ; Maidanchuk, I. Yu. ; Indutnyy, I. Z....
physica status solidi (b). 245 (2008) 12 - p. 2756-2760 , 2008

Link: https://doi.org/10.1002/..

8

Inhomogeneous SiOx〈Fe〉 metal-dielectric films as a material..:

Michailovskaya, E. V. ; Indutnyy, I. Z. ; Shepeliavyi, P. E.
Technical Physics. 48 (2003) 2 - p. 261-264 , 2003

Link: https://doi.org/10.1134/..

9

Fabrication of holographic diffraction gratings based on As..:

Kostyukevych, S. A. ; Shepeliavyi, P. E. ; Romanenko, P. F..
Technical Physics. 48 (2003) 1 - p. 115-117 , 2003

Link: https://doi.org/10.1134/..

10

Gradient light-absorbing SiOx/Me coatings for display panel:

Indutnyy, I. Z. ; Shepeliavyi, P. E. ; Michailovskaya, E. V....
Technical Physics. 47 (2002) 6 - p. 720-725 , 2002

Link: https://doi.org/10.1134/..

11

Structural transformations and silicon nanocrystallite form..:

Bratus', V. Ya. ; Yukhimchuk, V. A. ; Berezhinsky, L. I....
Semiconductors. 35 (2001) 7 - p. 821-826 , 2001

Link: https://doi.org/10.1134/..

12

Raman spectra of Ag- and Cu-photo-doped As40S60−xSex films:

Stronski, A.V ; Vlček, M ; Stetsun, A.I..
Journal of Non-Crystalline Solids. 270 (2000) 1-3 - p. 129-136 , 2000

Link: https://doi.org/10.1016/..

13

Mechanism of Tin-Induced Crystallization in Amorphous Silic..:

Neimash, V. B ; Goushcha, A. O ; Shepeliavyi, P. E...
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018560/629. , 2018

Link: https://ujp.bitp.kiev.ua..

14

Nanostructured Au Chips with Enhanced Sensitivity for Senso..:

Indutnyi, I. Z ; Ushenin, Yu. V ; Myn'ko, V. I...
https://ujp.bitp.kiev.ua/index.php/ujp/article/view/2018675/793. , 2018

Link: https://ujp.bitp.kiev.ua..

15

Enhancing sensitivity of SPR sensors by using nanostructure..:

I.Z. Indutnyi ; Yu.V. Ushenin ; D. Hegemann...
http://journal-spqeo.org.ua/n3_2017/P362-368abstr.html. , 2017

Link: https://doi.org/10.15407..