E-LIB Suche - Ergebnisse für: Shinichi, N.

1

SAT-266 EVALUATION OF AORTIC CALCIFICATION VOLUME AND SITES..:

Fujii, H. ; Kono, K. ; Goto, S....
Kidney International Reports. 4 (2019) 7 - p. S118 , 2019

Link: https://doi.org/10.1016/..

2

EP06.01: Evaluation of fetal computed tomography and ultras..:

Shinichi, N. ; Kobori, S. ; Toshimitsu, M...
Ultrasound in Obstetrics & Gynecology. 52 (2018) S1 - p. 211-212 , 2018

Link: https://doi.org/10.1002/..

3

908 Percutaneous transesophageal gastrotubing for patients ..:

Shinya, U. ; Shinichi, N. ; Tutomu, S....
European Journal of Cancer. 51 (2015) - p. S142 , 2015

Link: https://doi.org/10.1016/..

4

Low-Frequency Electric Field Treatment of Twisted Smectic C..:

MITANI, MAKOTO ; KURATA, YUYA ; TAKAKURA, KAZUNORI.
Ferroelectrics. 313 (2004) 1 - p. 55-62 , 2004

Link: https://doi.org/10.1080/..

5

AlGaInP / AlGaAs double heterostructure light emitting diod..:

Takahashi, N.Shinichi ; Fujiwara, Shuta ; Kohno, Kaoru..
Journal of Crystal Growth. 137 (1994) 1-2 - p. 240-244 , 1994

Link: https://doi.org/10.1016/..

6

Linear and Nonlinear Operations of Optically Addressed Spat..:

Masuda, Taro ; Oyama, Tsuyoshi ; Hamada, Shouji...
Japanese Journal of Applied Physics. 33 (1994) 4A - p. L523 , 1994

Link: https://doi.org/10.1143/..

7

Tristable Operation of Antiferroelectric Liquid Crystal Lig..:

Oyama, Tsuyoshi ; Masuda, Tarou ; Hamada, Shouji...
Japanese Journal of Applied Physics. 32 (1993) 5A - p. L668 , 1993

Link: https://doi.org/10.1143/..

8

Properties of Manganese‐Doped InGaAsP Grown on GaAs Substra..:

Ishikawa, Joji ; Takahashi, N. Shin‐ichi ; Ito, Toshio..
Journal of The Electrochemical Society. 137 (1990) 1 - p. 343-345 , 1990

Link: https://doi.org/10.1149/..

9

New double-heterostructure indium-tin oxide/InGaAsP/AlGaAs ..:

Ishikawa, Joji ; Funyu, Yasuhito ; Yonezawa, Rumiko...
Journal of Applied Physics. 66 (1989) 5 - p. 2181-2185 , 1989

Link: https://doi.org/10.1063/..

10

Effect of InGaAsP surface treatment for indium-tin-oxide/In..:

Matsubara, Shuichi ; Narui, Hironobu ; Tsuchiya, Naoki..
Journal of Applied Physics. 66 (1989) 7 - p. 3337-3341 , 1989

Link: https://doi.org/10.1063/..

11

Lasing characteristics of 0.8-μm InGaAsP/GaAs lasers fabric..:

Ishikawa, Joji ; Ito, Toshio ; Oh-iso, Yoshitaka...
Journal of Applied Physics. 65 (1989) 10 - p. 3767-3772 , 1989

Link: https://doi.org/10.1063/..

12

AlGaAs burying growth for InGaAsP/GaAs buried heterostructu..:

Ishikawa, Joji ; Tayama, Satoshi ; Ito, Toshio..
Journal of Crystal Growth. 94 (1989) 4 - p. 911-918 , 1989

Link: https://doi.org/10.1016/..

13

A simple method for monolithic fabrication of InGaAsP/GaAs ..:

Ito, Toshio ; Ishikawa, Joji ; Aramaki, Takashi...
Journal of Applied Physics. 64 (1988) 5 - p. 2770-2772 , 1988

Link: https://doi.org/10.1063/..

14

High-speed light valve using an amorphous silicon photosens..:

Takahashi, N. Shin-ichi ; Asada, Hideki ; Miyahara, Masaki..
Applied Physics Letters. 51 (1987) 16 - p. 1233-1235 , 1987

Link: https://doi.org/10.1063/..

15

n-ITO/p-InGaAsP Solar Cell Fabricated on GaAs Substrate:

Narui, Hironobu ; Matsubara, Shuichi ; Takahashi, N. Shin-ichi.
Japanese Journal of Applied Physics. 26 (1987) 2A - p. L91 , 1987

Link: https://doi.org/10.1143/..