E-LIB Suche - Ergebnisse für: Shmagin, V. B.

1

Complex Diagnostics of Silicon-on-Insulator Layers after Io..:

Yunin, P. A. ; Drozdov, M. N. ; Novikov, A. V....
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 18 (2024) 3 - p. 586-593 , 2024

Link: https://doi.org/10.1134/..

2

Light-emitting diodes with Ge(Si) nanoislands embedded in p..:

Shmagin, V B ; Yablonskiy, A N ; Stepikhova, M V...
Nanotechnology. 35 (2024) 16 - p. 165203 , 2024

Link: https://doi.org/10.1088/..

3

Capacitance spectroscopy of hole traps in high-resistance g..:

Murel, A. V. ; Shmagin, V. B. ; Krukov, V. L....
Semiconductors. 51 (2017) 11 - p. 1485-1489 , 2017

Link: https://doi.org/10.1134/..

4

Antimony segregation in Si layers grown by molecular beam e..:

Yurasov, D. V. ; Drozdov, M. N. ; Shmagin, V. B..
Semiconductors. 51 (2017) 12 - p. 1552-1556 , 2017

Link: https://doi.org/10.1134/..

5

Electroluminescence from MIS silicon-based light emitters w..:

Shmagin, V. B. ; Vdovichev, S. N. ; Morozova, E. E....
Semiconductors. 50 (2016) 11 - p. 1475-1478 , 2016

Link: https://doi.org/10.1134/..

6

Urbach absorption edge in epitaxial erbium-doped silicon:

Shmagin, V. B. ; Kudryavtsev, K. E. ; Shengurov, D. V..
Journal of Applied Physics. 117 (2015) 5 - p. , 2015

Link: https://doi.org/10.1063/..

7

Hodographs in diode-structure diagnostics:

Shmagin, V. B. ; Kudryavtsev, K. E. ; Novikov, A. V....
Semiconductors. 49 (2015) 11 - p. 1443-1447 , 2015

Link: https://doi.org/10.1134/..

8

Absorption cross section for the 4 I 15/2 → 4 I 13/2 transi..:

Kudryavtsev, K. E. ; Kryzhkov, D. I. ; Krasil'nikova, L. V....
JETP Letters. 100 (2015) 12 - p. 807-811 , 2015

Link: https://doi.org/10.1134/..

9

Specific features of the nonradiative relaxation of Er3+ io..:

Kudryavtsev, K. E. ; Kryzhkov, D. I. ; Antonov, A. V....
Semiconductors. 48 (2014) 12 - p. 1586-1591 , 2014

Link: https://doi.org/10.1134/..

10

Features of impurity photoconductivity in Si:Er/Si epitaxia..:

Antonov, A. V. ; Kudryavtsev, K. E. ; Shengurov, D. V...
Semiconductors. 47 (2013) 11 - p. 1500-1503 , 2013

Link: https://doi.org/10.1134/..

11

Natural fluctuations in tunneling-current distribution over..:

Kozlov, V. A. ; Obolensky, S. V. ; Shmagin, V. B..
Semiconductors. 46 (2012) 1 - p. 130-135 , 2012

Link: https://doi.org/10.1134/..

12

Auger de-excitation of different Er centers in Si:Er layers..:

Kudryavtsev, K E ; Shmagin, V B ; Shengurov, D V.
Semiconductor Science and Technology. 27 (2012) 10 - p. 105028 , 2012

Link: https://doi.org/10.1088/..

13

Electroluminescence at a wavelength of 1.54 μm in Si:Er/Si ..:

Kuznetsov, V. P. ; Stepihova, M. V. ; Shmagin, V. B....
Semiconductors. 45 (2011) 11 - p. 1430-1432 , 2011

Link: https://doi.org/10.1134/..

14

Dependence of the concentration of ionized donors on epitax..:

Kuznetsov, V. P. ; Shmagin, V. B. ; Drozdov, M. N....
Semiconductors. 45 (2011) 1 - p. 130-133 , 2011

Link: https://doi.org/10.1134/..

15

Electrical and luminescence properties of silicon-based tun..:

Shmagin, V. B. ; Kuznetsov, V. P. ; Kudryavtsev, K. E....
Semiconductors. 44 (2010) 11 - p. 1486-1491 , 2010

Link: https://doi.org/10.1134/..