E-LIB Suche - Ergebnisse für: Sicart, J

1

Pressure sensors based on silicon doped GaAs–AlAs superlatt..:

Robert, J. L. ; Bosc, F. ; Sicart, J...
Journal of Applied Physics. 87 (2000) 6 - p. 2941-2946 , 2000

Link: https://doi.org/10.1063/..

2

Electron mobility and charge correlation in silicon doped G..:

Bosc, F. ; Sicart, J. ; Robert, J. L..
Journal of Applied Physics. 88 (2000) 3 - p. 1515-1519 , 2000

Link: https://doi.org/10.1063/..

3

Physics of GaAs-AlAs Superlattices under Pressure ? Applica..:

Robert, J.L. ; Bosc, F. ; Sicart, J..
physica status solidi (b). 211 (1999) 1 - p. 481-488 , 1999

Link: https://doi.org/10.1002/..

4

Pressure and Hall sensors: what does MBE allow to do?:

Robert, J.L ; Contreras, S ; Sicart, J..
Journal of Crystal Growth. 201-202 (1999) - p. 727-733 , 1999

Link: https://doi.org/10.1016/..

5

Investigation of DX center in silicon doped GaAs–AlAs short..:

Bosc, F. ; Sicart, J. ; Robert, J. L.
Journal of Applied Physics. 85 (1999) 9 - p. 6520-6525 , 1999

Link: https://doi.org/10.1063/..

6

New type of persistent photoconductivity related to DX-cent..:

Piotrzkowski, R ; Litwin-Staszewska, E ; Bosc, F..
Physica B: Condensed Matter. 273-274 (1999) - p. 792-795 , 1999

Link: https://doi.org/10.1016/..

7

Negative magnetoresistance and electron localization in GaA..:

Gougam, A B ; Gandit, P ; Sicart, J.
Semiconductor Science and Technology. 14 (1999) 3 - p. 231-238 , 1999

Link: https://doi.org/10.1088/..

8

Electron mobility in Si-doped AlGaAs alloy and GaAs-AlAs ps..:

Bosc, F ; Sicart, J ; Robert, J L
Semiconductor Science and Technology. 14 (1999) 1 - p. 64-69 , 1999

Link: https://doi.org/10.1088/..

9

Investigation of Dopant Segregation in GaAsAlAs Short‐Peri..:

Robert, J. L. ; Bosc, F. ; Sicart, J.
physica status solidi (b). 198 (1996) 1 - p. 301-305 , 1996

Link: https://doi.org/10.1002/..

10

Hall effect characterization of silicon activation and segr..:

Sellitto, P. ; Sicart, J. ; Robert, J. L..
Applied Physics Letters. 67 (1995) 7 - p. 989-991 , 1995

Link: https://doi.org/10.1063/..

11

Piezoresistance of boron-doped PECVD and LPCVD polycrystall..:

Le Berre, M. ; Lemiti, M. ; Barbier, D....
Sensors and Actuators A: Physical. 46 (1995) 1-3 - p. 166-170 , 1995

Link: https://doi.org/10.1016/..

12

Determination of the energetical separation of DX states in..:

Robert, J.L. ; Sellitto, P. ; Gougam, A...
Journal of Physics and Chemistry of Solids. 56 (1995) 3-4 - p. 615-618 , 1995

Link: https://doi.org/10.1016/..

13

Electrical and structural properties of rapid thermally ann..:

Jeanjean, P. ; Sicart, J. ; Sellitto, P....
Journal of Applied Physics. 76 (1994) 8 - p. 4682-4688 , 1994

Link: https://doi.org/10.1063/..

14

Evidence of bistable shallow-deep silicon donors in GaAs-Al..:

Sellitto, P. ; Sicart, J. ; Robert, J. L.
Journal of Applied Physics. 75 (1994) 11 - p. 7356-7360 , 1994

Link: https://doi.org/10.1063/..

15

Electrical and piezoresistive properties of boron-implanted..:

Jeanjean, P. ; Sicart, J. ; Robert, J.L...
Sensors and Actuators A: Physical. 36 (1993) 3 - p. 241-245 , 1993

Link: https://doi.org/10.1016/..