E-LIB Suche - Ergebnisse für: Siemieniec, Ralf

1

Next step in power MOSFET evolution boosts application effi..:

, In: 2024 IEEE Applied Power Electronics Conference and Exposition (APEC),

Siemieniec, Ralf ; Mazzer, Simone ; Kahrimanovic, Elvir... - p. 1767-1774 , 2024

Link: https://doi.org/10.1109/..

2

Boosting efficiency in resonant converters by the use of a ..:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),

Siemieniec, Ralf ; Mazzer, Simone ; Noebauer, Gerhard... - p. 1-11 , 2023

Link: https://doi.org/10.23919..

3

600 V power device technologies for highly efficient power ..:

, In: 2021 23rd European Conference on Power Electronics and Applications (EPE'21 ECCE Europe),

Siemieniec, Ralf ; Mente, Rene ; Jantscher, Wolfgang.. - p. P.1-P.10 , 2021

Link: https://doi.org/10.23919..

4

650 V SiC Trench MOSFET for high-efficiency power supplies:

, In: 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe),

Siemieniec, Ralf ; Mente, Rene ; Jantscher, Wolfgang... - p. P.1-P.16 , 2019

Link: https://doi.org/10.23919..

5

Design considerations for charge‐compensated fast‐switching..:

Siemieniec, Ralf ; Braz, Cesar ; Blank, Oliver
IET Power Electronics. 11 (2018) 4 - p. 638-645 , 2018

Link: https://doi.org/10.1049/..

6

Development of low-voltage power MOSFET based on applicatio..:

Siemieniec, Ralf ; Hutzler, Michael ; Blank, Oliver...
Facta universitatis - series: Electronics and Energetics. 28 (2015) 3 - p. 477-494 , 2015

Link: https://doi.org/10.2298/..

7

Stability and performance analysis of a SiC-based cascode s..:

Siemieniec, Ralf ; Nöbauer, Gerhard ; Domes, Daniel
Microelectronics Reliability. 52 (2012) 3 - p. 509-518 , 2012

Link: https://doi.org/10.1016/..

8

A New Fast and Rugged 100 V Power MOSFET:

, In: 2006 12th International Power Electronics and Motion Control Conference,

Siemieniec, Ralf ; Hirler, Franz ; Schlogl, Andreas... - p. None , 2006

Link: https://doi.org/10.1109/..

9

Possibilities and limits of axial lifetime control by radia..:

Siemieniec, Ralf ; Lutz, Josef
Microelectronics Journal. 35 (2004) 3 - p. 259-267 , 2004

Link: https://doi.org/10.1016/..

10

3.3 kV IGBT and diode chipset using lifetime control techni..:

Netzel, Mario ; Lerner, Ralf ; Siemieniec, Ralf.
Facta universitatis - series: Electronics and Energetics. 15 (2002) 1 - p. 51-59 , 2002

Link: https://doi.org/10.2298/..

11

DEVELOPMENT OF LOW-VOLTAGE POWER MOSFET BASED ON APPLICATIO..:

Siemieniec, Ralf ; Hutzler, Michael ; Blank, Oliver...
http://casopisi.junis.ni.ac.rs/index.php/FUElectEnerg/article/view/872/615. , 2015

Link: http://casopisi.junis.ni..

12

Avalanche behavior of power MOSFETs:

Pawel, Ilja ; Siemieniec, Ralf ; Hirler, Franz.
Information technology and electrical engineering - devices and systems, materials and technologies for the future -- 51. IWK, Internationales Wissenschaftliches Kolloquium. , 2009

Link: https://www.db-thueringe..

13

Avalanche behavior of power MOSFETs:

, In: Information technology and electrical engineering - devices and systems, materials and technologies for the future / Faculty of Electrical and Information Technology, [Technische Universität Ilmenau. Hrsg.: Peter Scharff]

Hirler, Franz ; Pawel, Ilja ; Siemieniec, Ralf.. (2006) - p. 361-362

Exemplar: Zentrale:Magazin 01.R.9827