E-LIB Suche - Ergebnisse für: Simon-Najasek, Michél

1

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
physica status solidi (a). 220 (2023) 16 - p. , 2023

Link: https://doi.org/10.1002/..

2

Improved AlScN/GaN heterostructures grown by metal-organic ..:

Manz, Christian ; Leone, Stefano ; Kirste, Lutz...
Semiconductor Science and Technology. 36 (2021) 3 - p. 034003 , 2021

Link: https://doi.org/10.1088/..

3

Reliability Physics of GaN HEMT Microwave Devices: The Age ..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),

Zanoni, Enrico ; Meneghini, Matteo ; Meneghesso, Gaudenzio... - p. 1-10 , 2020

Link: https://doi.org/10.1109/..

4

Adaptive low-temperature covalent bonding of III-nitride th..:

Gerrer, Thomas ; Graff, Andreas ; Simon-Najasek, Michél...
Applied Physics Letters. 114 (2019) 25 - p. , 2019

Link: https://doi.org/10.1063/..

5

Advanced FIB sample preparation techniques for high resolut..:

Simon-Najasek, Michél ; Huebner, Susanne ; Altmann, Frank.
Microelectronics Reliability. 54 (2014) 9-10 - p. 1785-1789 , 2014

Link: https://doi.org/10.1016/..

6

Novel techniques for dopant contrast analysis on real IC st..:

Jatzkowski, Joerg ; Simon-Najasek, Michél ; Altmann, Frank
Microelectronics Reliability. 52 (2012) 9-10 - p. 2098-2103 , 2012

Link: https://doi.org/10.1016/..

7

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
ISSN:1862-6300. , 2023

Link: https://oa.tib.eu/renate..

8

Analysis of Mechanical Strain in AlGaN/GaN HFETs:

Yazdani, Hossein ; Graff, Andreas ; Simon-Najasek, Michél...
Physica status solidi. A. , 2023

Link: https://publica.fraunhof..

9

Improved AlScN/GaN heterostructures grown by metal-organic ..:

Manz, Christian ; Leone, Stefano ; Kirste, Lutz...
Manz , C , Leone , S , Kirste , L , Ligl , J , Frei , K , Fuchs , T , Prescher , M , Waltereit , P , Verheijen , M A , Graff , A , Simon-Najasek , M , Altmann , F , Fiederle , M & Ambacher , O 2021 , ' Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition ' , Semiconductor Science and Technology , vol. 36 , no. 3 , 034003 . https://doi.org/10.1088/1361-6641/abd924. , 2021

Link: https://research.tue.nl/..

10

Novel approach of combined planar and cross-sectional defec..:

Graff, A. ; Simon-Najasek, M. ; Hübner, S....
Microelectronics Reliability. 150 (2023) - p. 115096 , 2023

Link: https://doi.org/10.1016/..

11

Local metal segregation as root cause for electrical shorts..:

Simon-Najasek, M. ; Diehle, P. ; Große, Ch....
Microelectronics Reliability. 126 (2021) - p. 114235 , 2021

Link: https://doi.org/10.1016/..

12

Non-invasive soft breakdown localisation in low k dielectri..:

Herfurth, N. ; Wu, C. ; Beyreuther, A....
Microelectronics Reliability. 92 (2019) - p. 73-78 , 2019

Link: https://doi.org/10.1016/..

13

Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-..:

Dammann, M. ; Baeumler, M. ; Brückner, P....
Microelectronics Reliability. 88-90 (2018) - p. 385-388 , 2018

Link: https://doi.org/10.1016/..

14

Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applicati..:

Dammann, M. ; Baeumler, M. ; Polyakov, V....
Microelectronics Reliability. 76-77 (2017) - p. 292-297 , 2017

Link: https://doi.org/10.1016/..

15

High resolution physical analysis of ohmic contact formatio..:

Graff, A. ; Simon-Najasek, M. ; Altmann, F....
Microelectronics Reliability. 76-77 (2017) - p. 338-343 , 2017

Link: https://doi.org/10.1016/..