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Sklénard, Benoit
71  Ergebnisse:
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1

Atomistic description of Si etching with HCl:

Martinez, Biel ; Li, Jing ; Prats, Hector.
Applied Surface Science.  657 (2024)  - p. 159836 , 2024
Link: https://doi.org/10.1016/..
 
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2

Exploring charge hopping transport in amorphous HfO2: An ap..:

Hirchaou, Youssef ; Sklénard, Benoît ; Goes, Wolfgang...
Applied Physics Letters.  124 (2024)  5 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Equivariant graph neural network interatomic potential for ..:

Lee, Sung-Ho ; Li, Jing ; Olevano, Valerio.
Physical Review Materials.  8 (2024)  3 - p. , 2024
Link: https://doi.org/10.1103/..
 
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4

A generalizable, uncertainty-aware neural network potential..:

Lee, Sung-Ho ; Olevano, Valerio ; Sklénard, Benoit
Solid-State Electronics.  199 (2023)  - p. 108508 , 2023
Link: https://doi.org/10.1016/..
 
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5

Oxygen vacancy and hydrogen in amorphous HfO2:

Sklénard, Benoît ; Cvitkovich, Lukas ; Waldhoer, Dominic.
Journal of Physics D: Applied Physics.  , 2023
Link: https://doi.org/10.1088/..
 
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6

Improving the tight-binding description of spin-orbit inter..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Veste, Gaetan ; Rodriguez-Mena, Esteban A. ; Martinez, Biel... - p. 345-348 , 2023
Link: https://doi.org/10.23919..
 
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7

XPS Core-Level Chemical Shift by Ab Initio Many-Body Theory:

Mukatayev, Iskander ; Moevus, Florient ; Sklénard, Benoît..
The Journal of Physical Chemistry A.  127 (2023)  7 - p. 1642-1648 , 2023
Link: https://doi.org/10.1021/..
 
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8

Impact of hydrogen coverage on silane adsorption during Si ..:

Treps, Laureline ; Li, Jing ; Sklénard, Benoit
Solid-State Electronics.  197 (2022)  - p. 108441 , 2022
Link: https://doi.org/10.1016/..
 
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9

Size and Solvation Effects on Electronic and Optical Proper..:

Sklénard, Benoît ; Mugny, Gabriel ; Chehaibou, Bilal...
The Journal of Physical Chemistry Letters.  13 (2022)  39 - p. 9044-9050 , 2022
Link: https://doi.org/10.1021/..
 
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10

Ab initio study of electron mobility in V2O5 via polaron ho..:

Defrance, Remi ; Sklénard, Benoit ; Guillaumont, Marc..
Solid-State Electronics.  198 (2022)  - p. 108455 , 2022
Link: https://doi.org/10.1016/..
 
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11

Electronic and thermal properties of GeTe/Sb2Te3 superlatti..:

Sklénard, Benoît ; Triozon, François ; Sabbione, Chiara...
Applied Physics Letters.  119 (2021)  20 - p. , 2021
Link: https://doi.org/10.1063/..
 
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12

Quantitative Mapping of the Charge Density in a Monolayer o..:

Boureau, Victor ; Sklenard, Benoit ; McLeod, Robert...
ACS Nano.  14 (2019)  1 - p. 524-530 , 2019
Link: https://doi.org/10.1021/..
 
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13

Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: C..:

Sassine, Gilbert ; Nail, Cécile ; Blaise, Philippe...
Advanced Electronic Materials.  5 (2018)  2 - p. , 2018
Link: https://doi.org/10.1002/..
 
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14

Optical vs electronic gap of hafnia by ab initio Bethe-Salp..:

Sklénard, Benoît ; Dragoni, Alberto ; Triozon, François.
Applied Physics Letters.  113 (2018)  17 - p. , 2018
Link: https://doi.org/10.1063/..
 
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15

Advances in the understanding of microscopic switching mech..:

, In: 2017 47th European Solid-State Device Research Conference (ESSDERC),
Sklenard, Benoit ; Blaise, Philippe ; Traore, Boubacar... - p. 46-49 , 2017
Link: https://doi.org/10.1109/..
 
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