Smid, V.
347  Ergebnisse:
Personensuche X
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1

Physica status solidi 

Volume 88, Number 2: April 16  Physica status solidi ; Volume 88, Number 2, A
Abdullaev, E. G ; Abramov, V. N ; Alexopoulos, K... - Reprint 2021 . , [2022]
 
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2

Physica status solidi 

Volume 89, Number 1: May 16  Physica status solidi ; Volume 89, Number 1, A
Abass, A. K ; Abramov, V. N ; Abrikosov, N. Kh... - Reprint 2021 . , [2022]
 
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3

Physica status solidi 

Volume 49, Number 2: October 16  Physica status solidi ; Volume 49, Number 2, A
Agarwal, V. K ; Albrecht, G ; Aleksandrova, I. P... - Reprint 2021 . , [2022]
 
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4

Physica status solidi 

Volume 12, Number 1: July 16  Physica status solidi ; Volume 12, Number 1, A
Aggarwal, M.D ; Albers, C ; Andronikos, P... - Reprint 2021 . , [2021]
 
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6

DX center in AlGaAsSb:Te and a mechanism of its ionization:

Terziev, N. S. ; Hubík, P. ; Krištofik, J....
Journal of Applied Physics.  79 (1996)  5 - p. 2467-2472 , 1996
 
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7

Thermodynamic aspects of (Te,S)-double-doped GaSb crystal g..:

Šestáková, V. ; Štěpánek, B. ; Šesták, J...
Materials Science and Engineering: B.  21 (1993)  1 - p. 14-18 , 1993
 
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8

DX-like centre in bulk GaSb:S:

Hubík, P. ; S̆míd, V. ; Kris̆tofik, J...
Solid State Communications.  86 (1993)  1 - p. 19-22 , 1993
 
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11

Sulphur-doped GaSb single crystals:

Štěpánek, B. ; Šestáková, V. ; Hubík, P...
Journal of Crystal Growth.  126 (1993)  4 - p. 617-620 , 1993
 
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14

Surface conductance in semi-insulating GaAs:

Mares, J J ; Kristofik, J ; Smid, V
Semiconductor Science and Technology.  7 (1992)  1 - p. 119-124 , 1992
 
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15

The effect of high hydrostatic pressure on DX centres in Ga..:

Smid, V ; Kristofik, J ; Zeman, J.
Semiconductor Science and Technology.  6 (1991)  10B - p. B150-B153 , 1991
 
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