E-LIB Suche - Ergebnisse für: Sodini, D

1

XQR-30: The ultimate XSHOOTER quasar sample at the reioniza..:

D'Odorico, Valentina ; Bañados, E ; Becker, G D...
Monthly Notices of the Royal Astronomical Society. 523 (2023) 1 - p. 1399-1420 , 2023

Link: https://doi.org/10.1093/..

2

Physica status solidi

Volume 8, Number 2: December 16 Physica status solidi ; Volume 8, Number 2, A

Adam, G ; Askill, J ; Augier, D... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

3

Indomethacin promotes nitric oxide function in the ductus a..:

Sodini, D ; Baragatti, B ; Barogi, S..
British Journal of Pharmacology. 153 (2008) 8 - p. 1631-1640 , 2008

Link: https://doi.org/10.1038/..

4

Interactions between NO, CO and an endothelium‐derived hype..:

Baragatti, B ; Brizzi, F ; Barogi, S...
British Journal of Pharmacology. 151 (2007) 1 - p. 54-62 , 2007

Link: https://doi.org/10.1038/..

5

On the anomalous behavior of the relative amplitude of RTS ..:

Vandamme, L.K.J. ; Sodini, D. ; Gingl, Z.
Solid-State Electronics. 42 (1998) 6 - p. 901-905 , 1998

Link: https://doi.org/10.1016/..

6

The stroboscopic phase selective voltage contrast: a fast s..:

Girard, P. ; Renaud, JF. ; Sodini, D....
Microelectronic Engineering. 16 (1992) 1-4 - p. 475-480 , 1992

Link: https://doi.org/10.1016/..

7

Numerical simulation of the charge transfer in GaAs BCCDs:

Sodini, D. ; Torbati, K. ; Rigaud, D..
Solid-State Electronics. 29 (1986) 9 - p. 969-976 , 1986

Link: https://doi.org/10.1016/..

8

2-D numerical simulation of the charge transfer in GaAs B.C..:

Sodini, D. ; Touboul, A. ; Rigaud, D..
Physica B+C. 129 (1985) 1-3 - p. 568-572 , 1985

Link: https://doi.org/10.1016/..

9

A new approach to model d.c. and a.c. characteristics of ju..:

Sodini, D. ; Rigaud, D.
Solid-State Electronics. 24 (1981) 7 - p. 635-642 , 1981

Link: https://doi.org/10.1016/..

10

Analysis of channel noise and threshold voltage in sos-MOS ..:

Touboul, A. ; Sodini, D. ; Rigaud, D..
Solid-State Electronics. 23 (1980) 4 - p. 335-343 , 1980

Link: https://doi.org/10.1016/..

11

Noise of hot carriers in the channel of n silicon junction ..:

Nougier, J.P. ; Sodini, D. ; Rolland, M...
Solid-State Electronics. 21 (1978) 1 - p. 133-138 , 1978

Link: https://doi.org/10.1016/..

12

Impedance and noise in the channel of a GaAs Schottky-gate ..:

Sodini, D. ; Lecoy, G. ; Rigaud, D..
Solid-State Electronics. 20 (1977) 7 - p. 579-581 , 1977

Link: https://doi.org/10.1016/..

13

Equivalent noise generators in JG FET:

Lecoy, G. ; Rigaud, D. ; Sodini, D.
Solid-State Electronics. 17 (1974) 1 - p. 11-16 , 1974

Link: https://doi.org/10.1016/..

14

Study of the conducting channel of the JG FET application t..:

Rigaud, D. ; Nougier, J.P. ; Sodini, D..
Physica. 74 (1974) 3 - p. 613-622 , 1974

Link: https://doi.org/10.1016/..

15

On the electrical properties of CuxS:

Bougnot, J. ; Guastavino, F. ; Luquet, H..
Physica Status Solidi (a). 8 (1971) 2 - p. K93-K96 , 1971

Link: https://doi.org/10.1002/..