E-LIB Suche - Ergebnisse für: Soonckindt, L.

1

Passivation of GaSb by sulfur treatment:

Pérotin, M. ; Coudray, P. ; Gouskov, L....
Journal of Electronic Materials. 23 (1994) 1 - p. 7-12 , 1994

Link: https://doi.org/10.1007/..

2

Importance of defects and dopant nature in alkali metal/III..:

Schirm, K.M. ; Soukiassian, P. ; Mangat, P.S....
Applied Surface Science. 68 (1993) 3 - p. 417-425 , 1993

Link: https://doi.org/10.1016/..

3

Synchrotron radiation study of Rb/p-GaSb(110) interface for..:

Bonnet, J.J. ; Soonckindt, L. ; Schirm, K.M....
Applied Surface Science. 68 (1993) 3 - p. 427-432 , 1993

Link: https://doi.org/10.1016/..

4

A study of oxygen interaction with GaSb cleaved surfaces by..:

Bonnet, J. ; Soonckindt, L. ; Ismail, A..
Thin Solid Films. 151 (1987) 1 - p. 103-110 , 1987

Link: https://doi.org/10.1016/..

5

Auger electron beam effects on electrical properties and su..:

Soonckindt, L. ; Bonnet, J. ; Mansour, H..
Surface Science. 162 (1985) 1-3 - p. 186-194 , 1985

Link: https://doi.org/10.1016/..

6

The Kelvin probe method for work function topographies: tec..:

Bonnet, J ; Soonckindt, L ; Lassabatère, L
Vacuum. 34 (1984) 7 - p. 693-698 , 1984

Link: https://doi.org/10.1016/..

7

Effects of the modification with temperature of the bulk pr..:

Soonckindt, L. ; Bonnet, J. ; Masri, P..
Surface Science. 130 (1983) 2 - p. L337-L343 , 1983

Link: https://doi.org/10.1016/..

8

Sur l'utilisation des modifications de barrière de surface ..:

Bonnet, J. ; Soonckindt, L. ; Lassabatère, L.
Thin Solid Films. 91 (1982) 4 - p. 283-300 , 1982

Link: https://doi.org/10.1016/..

9

Electron diffusion lengths in p-type InP involved in indium..:

Gouskov, L. ; Luquet, H. ; Soonckindt, L....
Journal of Applied Physics. 53 (1982) 10 - p. 7014-7019 , 1982

Link: https://doi.org/10.1063/..

10

Propriétés électroniques des surfaces de GaSb clivées en ul..:

Soonckindt, L. ; Bonnet, J. ; Lassabatère, L.
Thin Solid Films. 78 (1981) 2 - p. 167-176 , 1981

Link: https://doi.org/10.1016/..

11

Fabrication and characterization of the lamellar ternary co..:

Gouskov, L. ; Gouskov, A. ; Hajjar, M...
Physica B+C. 99 (1980) 1-4 - p. 291-298 , 1980

Link: https://doi.org/10.1016/..

12

Epitaxial Growth of Cubic ZnS x Se1 − x by Vapor Phase Tran..:

Etienne, D. ; Soonckindt, L. ; Bougnot, G.
Journal of The Electrochemical Society. 127 (1980) 8 - p. 1800-1806 , 1980

Link: https://doi.org/10.1149/..

13

Sur la contribution des differents porteurs à la zone de ch..:

Bonnet, J. ; Soonckindt, L. ; Lassabatere, L.
Surface Science. 91 (1980) 1 - p. 283-300 , 1980

Link: https://doi.org/10.1016/..

14

A calculation of defect gap states on the clean (110) surfa..:

Lohez, D. ; Lannoo, M. ; Masri, P...
Surface Science. 99 (1980) 1 - p. 132-137 , 1980

Link: https://doi.org/10.1016/..

15

A propos de l'interprétation des variations avec la tempéra..:

Soonckindt, L. ; Bonnet, J. ; Lassabatere, L.
Surface Science. 87 (1979) 2 - p. 605-612 , 1979

Link: https://doi.org/10.1016/..