E-LIB Suche - Ergebnisse für: Spassov, L.

1

Characterization of program and erase speed of memory capac..:

Spassov, D ; Paskaleva, A ; Ivanov, Tz.
Journal of Physics: Conference Series. 2710 (2024) 1 - p. 012027 , 2024

Link: https://doi.org/10.1088/..

2

Ellipsometry of very thin Al2O3-HfO2 stacks for nano-memory..:

Karmakov, Y ; Spassov, D ; Paskaleva, A
Journal of Physics: Conference Series. 2710 (2024) 1 - p. 012010 , 2024

Link: https://doi.org/10.1088/..

3

Characterization of the Electric Breakdowns in Metal-Insula..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Spassov, D. ; Paskaleva, A. ; Guziewicz, E.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

4

Charge trapping effects in nonvolatile memory cells with Hf..:

Spassov, D ; Paskaleva, A ; Guziewicz, E..
Journal of Physics: Conference Series. 2436 (2023) 1 - p. 012016 , 2023

Link: https://doi.org/10.1088/..

5

Self-heating of stressed VDMOS devices under specific opera..:

Veljković, S. ; Mitrović, N. ; Jovanović, I....
Microelectronics Reliability. 150 (2023) - p. 115213 , 2023

Link: https://doi.org/10.1016/..

6

Effects in Commercial p-Channel Power VDMOS Transistors Ini..:

, In: 2023 IEEE 33rd International Conference on Microelectronics (MIEL),

Veljkovic, S. ; Mitrovic, N. ; Djoric-Veljkovic, S.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

7

Interfaces in ALD very thin Al2O3/HfO2 stacks studied by el..:

Karmakov, Y ; Paskaleva, A ; Spassov, D
Journal of Physics: Conference Series. 2436 (2023) 1 - p. 012015 , 2023

Link: https://doi.org/10.1088/..

8

Electric characterization of transition metal (Co, Ni, Fe) ..:

Spassov, D ; Paskaleva, A ; Blagoev, B.
Journal of Physics: Conference Series. 2436 (2023) 1 - p. 012014 , 2023

Link: https://doi.org/10.1088/..

9

Electrical characterization of memory capacitors for nonvol..:

Spassov, D ; Paskaleva, A ; Stanchev, T.
Journal of Physics: Conference Series. 2240 (2022) 1 - p. 012046 , 2022

Link: https://doi.org/10.1088/..

10

Depth profiling of very thin HfO2/Al2O3 stacks by ellipsome..:

Karmakov, Y ; Paskaleva, A ; Spassov, D
Journal of Physics: Conference Series. 2240 (2022) 1 - p. 012049 , 2022

Link: https://doi.org/10.1088/..

11

Effect of blocking and tunnel oxide layers on the charge tr..:

Spassov, D ; Paskaleva, A ; Guziewicz, E...
Journal of Physics: Conference Series. 1762 (2021) 1 - p. 012038 , 2021

Link: https://doi.org/10.1088/..

12

Inter-trap tunneling in vanadium doped TiO2 sol-gel films:

Simeonov, S. ; Szekeres, A. ; Covei, M....
Materials Research Bulletin. 127 (2020) - p. 110854 , 2020

Link: https://doi.org/10.1016/..

13

Impact of γ Radiation on Charge Trapping Properties of Nano..:

, In: 2019 IEEE 31st International Conference on Microelectronics (MIEL),

Spassov, D. ; Paskaleva, A. ; Davidovic, V.... - p. 59-62 , 2019

Link: https://doi.org/10.1109/..

14

Leakage currents in Al2O3/HfO2 multilayer high-k stacks and..:

Spassov, D ; Paskaleva, A ; Krajewski, T A..
Journal of Physics: Conference Series. 1186 (2019) - p. 012025 , 2019

Link: https://doi.org/10.1088/..

15

A review of pulsed NBTI in P-channel power VDMOSFETs:

Danković, D. ; Manić, I. ; Prijić, A....
Microelectronics Reliability. 82 (2018) - p. 28-36 , 2018

Link: https://doi.org/10.1016/..