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Spessot, A.
113  Ergebnisse:
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1

Side and Corner Region Non-Uniformities in Grown SiO2 and T..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Bastos, J. P. ; O'Sullivan, B. J. ; Higashi, Y.... - p. P36.PI-1-P36.PI-7 , 2024
Link: https://doi.org/10.1109/..
 
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2

Compact thermally stable high voltage FinFET with 40 nm tox..:

Spessot, A. ; Matagne, P. ; Arimura, H....
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP12 , 2024
Link: https://doi.org/10.35848..
 
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3

On The Contribution of Secondary Holes in Hot-Carrier Degra..:

, In: 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Tyaginov, S.E. ; Bury, E. ; Grill, A.... - p. 1-3 , 2023
Link: https://doi.org/10.1109/..
 
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4

FinFETs with Thermally Stable RMG Gate Stack for Future DRA..:

, In: 2022 International Electron Devices Meeting (IEDM),
Capogreco, E. ; Arimura, H. ; Ritzenthaler, R.... - p. 26.2.1-26.2.4 , 2022
Link: https://doi.org/10.1109/..
 
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5

High Performance Thermally Resistant FinFETs DRAM Periphera..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ritzenthaler, R. ; Capogreco, E. ; Dupuy, E.... - p. 306-307 , 2022
Link: https://doi.org/10.1109/..
 
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6

Environmental Impact of CMOS Logic Technologies:

, In: 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Ragnarsson, L-A ; Bardon, M. Garcia ; Wuytens, P.... - p. 82-84 , 2022
Link: https://doi.org/10.1109/..
 
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7

TCAD-Assisted MultiPhysics Modeling & Simulation for Accele..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Mohiyaddin, F. A. ; Simion, G. ; Stuyck, N. I. Dumoulin... - p. 253-256 , 2020
Link: https://doi.org/10.23919..
 
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8

Fast & Accurate Methodology for Aging Incorporation in Circ..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),
Mishra, S. ; Weckx, P. ; Lin, J. Y.... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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9

DTCO including Sustainability: Power-Performance-Area-Cost-..:

, In: 2020 IEEE International Electron Devices Meeting (IEDM),
Garcia Bardon, M. ; Wuytens, P. ; Ragnarsson, L.-A.... - p. 41.4.1-41.4.4 , 2020
Link: https://doi.org/10.1109/..
 
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10

Buried power SRAM DTCO and system-level benchmarking in N3:

, In: 2020 IEEE Symposium on VLSI Technology,
Salahuddin, S. ; Perumkunnil, M. ; Litta, E. Dentoni... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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11

First Monolithic Integration of 3D Complementary FET (CFET)..:

, In: 2020 IEEE Symposium on VLSI Technology,
Subramanian, S. ; Hosseini, M. ; Chiarella, T.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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12

Impact of Fin Height on Bias Temperature Instability of Mem..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
Boubaaya, M. ; Benaceur-Doumaz, D. ; Ferhat Hamida, A.... - p. 1-5 , 2019
Link: https://doi.org/10.1109/..
 
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13

Novel forksheet device architecture as ultimate logic scali..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Weckx, P. ; Gupta, M. ; Oniki, Y.... - p. 36.5.1-36.5.4 , 2019
Link: https://doi.org/10.1109/..
 
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14

Multiphysics Simulation & Design of Silicon Quantum Dot Qub..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Mohiyaddin, F. A. ; Chan, BT ; Ivanov, Ts.... - p. 39.5.1-39.5.4 , 2019
Link: https://doi.org/10.1109/..
 
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15

Reliability Engineering Enabling Continued Logic for Memory..:

, In: 2019 IEEE International Integrated Reliability Workshop (IIRW),
O'Sullivan, B. J. ; Linten, D. ; Horiguchi, N.... - p. 1-11 , 2019
Link: https://doi.org/10.1109/..
 
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