E-LIB Suche - Ergebnisse für: Spila, T.

1

Epitaxial growth of VO2 by periodic annealing:

Tashman, J. W. ; Lee, J. H. ; Paik, H....
Applied Physics Letters. 104 (2014) 6 - p. , 2014

Link: https://doi.org/10.1063/..

2

Real-time control of AlN incorporation in epitaxial Hf1−Al ..:

Howe, B.M. ; Sammann, E. ; Wen, J.G....
Acta Materialia. 59 (2011) 2 - p. 421-428 , 2011

Link: https://doi.org/10.1016/..

3

Continuum model of surface roughening and epitaxial breakdo..:

Bratland, K. A. ; Spila, T. ; Cahill, D. G...
Journal of Applied Physics. 109 (2011) 6 - p. , 2011

Link: https://doi.org/10.1063/..

4

Phosphorus incorporation during Si(001):P gas-source molecu..:

Cho, B. ; Bareño, J. ; Foo, Y. L....
Journal of Applied Physics. 103 (2008) 12 - p. , 2008

Link: https://doi.org/10.1063/..

5

Evidence of Transition-Metal Accumulation on Aged Graphite ..:

Abraham, D. P. ; Spila, T. ; Furczon, M. M..
Electrochemical and Solid-State Letters. 11 (2008) 12 - p. A226 , 2008

Link: https://doi.org/10.1149/..

6

The ATLAS level-1 trigger: Status of the system and experie..:

, In: 2007 IEEE Nuclear Science Symposium Conference Record,

Achenbach, R. ; Bahat Treidel, O. ; Liberti, B.... - p. None , 2007

Link: https://doi.org/10.1109/..

7

Growth of epitaxial Cu on MgO(001) by magnetron sputter dep..:

Purswani, J.M. ; Spila, T. ; Gall, D.
Thin Solid Films. 515 (2006) 3 - p. 1166-1170 , 2006

Link: https://doi.org/10.1016/..

8

Sn-mediated Ge∕Ge(001) growth by low-temperature molecular-..:

Bratland, K. A. ; Foo, Y. L. ; Spila, T....
Journal of Applied Physics. 97 (2005) 4 - p. , 2005

Link: https://doi.org/10.1063/..

9

Coherent diffraction patterns of individual dislocation str..:

Robinson, I K ; Da, Y ; Spila, T.
Journal of Physics D: Applied Physics. 38 (2005) 10A - p. A7-A10 , 2005

Link: https://doi.org/10.1088/..

10

Effect of steady-state hydrogen coverage on the evolution o..:

Spila, T. ; Desjardins, P. ; D'Arcy-Gall, J...
Journal of Applied Physics. 93 (2003) 4 - p. 1918-1925 , 2003

Link: https://doi.org/10.1063/..

11

Smooth relaxed Si0.75Ge0.25 layers on Si(001) via in situ r..:

Hong, S. ; Foo, Y. L. ; Bratland, K. A....
Applied Physics Letters. 83 (2003) 21 - p. 4321-4323 , 2003

Link: https://doi.org/10.1063/..

12

Direct measurements of strain depth profiles in Ge/Si(001) ..:

Moon, D. W. ; Lee, H. I. ; Cho, B....
Applied Physics Letters. 83 (2003) 25 - p. 5298-5300 , 2003

Link: https://doi.org/10.1063/..

13

Growth of single-crystal CrN on MgO(001): Effects of low-en..:

Gall, D. ; Shin, C.-S. ; Spila, T....
Journal of Applied Physics. 91 (2002) 6 - p. 3589-3597 , 2002

Link: https://doi.org/10.1063/..

14

Hydrogen-mediated quenching of strain-induced surface rough..:

Spila, T. ; Desjardins, P. ; Vailionis, A....
Journal of Applied Physics. 91 (2002) 6 - p. 3579-3588 , 2002

Link: https://doi.org/10.1063/..

15

Si(113) hydrogen desorption kinetics: a temperature program..:

Kim, H. ; Spila, T. ; Greene, J.E.
Surface Science. 490 (2001) 1-2 - p. L602-L608 , 2001

Link: https://doi.org/10.1016/..