E-LIB Suche - Ergebnisse für: Steenbergen, Elizabeth H.

1

Recombination rate analysis in long minority carrier lifeti..:

Carrasco, Rigo A. ; Morath, Christian P. ; Grant, Perry C....
Journal of Applied Physics. 129 (2021) 18 - p. , 2021

2

Vertical carrier transport in strain-balanced InAs/InAsSb t..:

Casias, Lilian K. ; Morath, Christian P. ; Steenbergen, Elizabeth H....
Applied Physics Letters. 116 (2020) 18 - p. , 2020

Link: https://doi.org/10.1063/..

3

Minority carrier lifetime and photoluminescence of mid-wave..:

Petluru, Priyanka ; Grant, Perry C. ; Muhowski, Aaron J....
Applied Physics Letters. 117 (2020) 6 - p. , 2020

Link: https://doi.org/10.1063/..

4

Carrier concentration and transport in Be-doped InAsSb for ..:

Casias, Lilian K. ; Morath, Christian P. ; Steenbergen, Elizabeth H....
Infrared Physics & Technology. 96 (2019) - p. 184-191 , 2019

Link: https://doi.org/10.1016/..

5

Impact of proton-induced transmutation doping in semiconduc..:

Logan, Julie V. ; Short, Michael P. ; Webster, Preston T...
Journal of Materials Chemistry C. 7 (2019) 29 - p. 8905-8914 , 2019

Link: https://doi.org/10.1039/..

6

Raman Scattering Study of Lattice Vibrations in the Type-II..:

Liu, Henan ; Zhang, Yong ; Steenbergen, Elizabeth H....
Physical Review Applied. 8 (2017) 3 - p. , 2017

Link: https://doi.org/10.1103/..

7

Evaluation of antimony segregation in InAs/InAs1−xSbx type-..:

Lu, Jing ; Luna, Esperanza ; Aoki, Toshihiro...
Journal of Applied Physics. 119 (2016) 9 - p. , 2016

Link: https://doi.org/10.1063/..

8

Unipolar infrared detectors based on InGaAs/InAsSb ternary ..:

Ariyawansa, Gamini ; Reyner, Charles J. ; Duran, Joshua M....
Applied Physics Letters. 109 (2016) 2 - p. , 2016

Link: https://doi.org/10.1063/..

9

InGaAs/InAsSb strained layer superlattices for mid-wave inf..:

Ariyawansa, Gamini ; Reyner, Charles J. ; Steenbergen, Elizabeth H....
Applied Physics Letters. 108 (2016) 2 - p. , 2016

Link: https://doi.org/10.1063/..

10

Influence of carrier localization on minority carrier lifet..:

Lin, Zhi-Yuan ; Liu, Shi ; Steenbergen, Elizabeth H..
Applied Physics Letters. 107 (2015) 20 - p. , 2015

Link: https://doi.org/10.1063/..

11

Dependence of minority carrier lifetime of Be-doped InAs/In..:

Connelly, Blair C. ; Steenbergen, Elizabeth H. ; Smith, Howard E....
physica status solidi (b). 253 (2015) 4 - p. 630-634 , 2015

Link: https://doi.org/10.1002/..

12

A calibration method for group V fluxes and impact of V/III..:

Li, Hua ; Liu, Shi ; Cellek, Oray O....
Journal of Crystal Growth. 378 (2013) - p. 145-149 , 2013

Link: https://doi.org/10.1016/..

13

Quantitative analysis of strain distribution in InAs/InAs1−..:

Mahalingam, Krishnamurthy ; Steenbergen, Elizabeth H. ; Brown, Gail J..
Applied Physics Letters. 103 (2013) 6 - p. , 2013

Link: https://doi.org/10.1063/..

14

Impact of substrate temperature on the structural and optic..:

Liu, Shi ; Li, Hua ; Cellek, Oray O....
Applied Physics Letters. 102 (2013) 7 - p. , 2013

Link: https://doi.org/10.1063/..

15

Luminescence coupling effects on multijunction solar cell e..:

Lim, Swee Hoe ; Li, Jing‐Jing ; Steenbergen, Elizabeth H..
Progress in Photovoltaics: Research and Applications. 21 (2011) 3 - p. 344-350 , 2011

Link: https://doi.org/10.1002/..