E-LIB Suche - Ergebnisse für: Stoffels, S.

1

GaN-on-SOI: Monolithically Integrated All-GaN ICs for Power..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),

Li, X. ; Stoffels, S. ; Bakeroot, B.... - p. 4.4.1-4.4.4 , 2019

Link: https://doi.org/10.1109/..

2

Evaluation of novel carrier substrates for high reliability..:

Stoffels, S. ; Geens, K. ; Li, X....
MRS Communications. 8 (2018) 4 - p. 1387-1394 , 2018

Link: https://doi.org/10.1557/..

3

Impact of the substrate and buffer design on the performanc..:

Borga, M. ; Meneghini, M. ; Stoffels, S....
Microelectronics Reliability. 88-90 (2018) - p. 584-588 , 2018

Link: https://doi.org/10.1016/..

4

Field- and current-driven degradation of GaN-based power HE..:

Rossetto, I. ; Meneghini, M. ; Canato, E....
Microelectronics Reliability. 76-77 (2017) - p. 298-303 , 2017

Link: https://doi.org/10.1016/..

5

Optimization of the source field‐plate design for low dynam..:

Ronchi, N. ; Bakeroot, B. ; You, S....
physica status solidi (a). 214 (2017) 3 - p. , 2017

Link: https://doi.org/10.1002/..

6

Reliability and parasitic issues in GaN-based power HEMTs: ..:

Meneghesso, G ; Meneghini, M ; Rossetto, I...
Semiconductor Science and Technology. 31 (2016) 9 - p. 093004 , 2016

Link: https://doi.org/10.1088/..

7

Current transient spectroscopy for trapping analysis on Au-..:

Hu, J. ; Stoffels, S. ; Lenci, S....
Applied Physics Letters. 106 (2015) 8 - p. , 2015

Link: https://doi.org/10.1063/..

8

Analysis of off-state leakage mechanisms in GaN-based MIS-H..:

Marino, F.A. ; Bisi, D. ; Meneghini, M....
Solid-State Electronics. 113 (2015) - p. 9-14 , 2015

Link: https://doi.org/10.1016/..

9

On the origin of the two-dimensional electron gas at AlGaN/..:

Bakeroot, B. ; You, S. ; Wu, T.-L....
Journal of Applied Physics. 116 (2014) 13 - p. , 2014

Link: https://doi.org/10.1063/..

10

Trapping in GaN-based metal-insulator-semiconductor transis..:

Meneghini, M. ; Bisi, D. ; Marcon, D....
Applied Physics Letters. 104 (2014) 14 - p. , 2014

Link: https://doi.org/10.1063/..

11

Physical origin of current collapse in Au-free AlGaN/GaN Sc..:

Hu, J. ; Stoffels, S. ; Lenci, S....
Microelectronics Reliability. 54 (2014) 9-10 - p. 2196-2199 , 2014

Link: https://doi.org/10.1016/..

12

AlGaN/GaN field effect transistors for power electronics—Ef..:

Hodges, C. ; Anaya Calvo, J. ; Stoffels, S...
Applied Physics Letters. 103 (2013) 20 - p. , 2013

Link: https://doi.org/10.1063/..

13

Ischaemic intestinal perforation complicated by Clostridium..:

Mutters, N. T. ; Stoffels, S. ; Eisenbach, C..
Infection. 41 (2013) 5 - p. 1033-1035 , 2013

Link: https://doi.org/10.1007/..

14

Reliability of AlGaN/GaN HEMTs: Permanent leakage current i..:

Marcon, D. ; Viaene, J. ; Favia, P....
Microelectronics Reliability. 52 (2012) 9-10 - p. 2188-2193 , 2012

Link: https://doi.org/10.1016/..

15

Determining asphaltic concrete pavement structural properti..:

Lytton, R.L. ; Germann, F.P. ; Chou, Y.J..
NDT & E International. 25 (1992) 1 - p. 42 , 1992

Link: https://doi.org/10.1016/..