E-LIB Suche - Ergebnisse für: Stoklas, R

1

Electron transport properties in thin InN layers grown on I..:

Stoklas, R. ; Hasenöhrl, S. ; Dobročka, E...
Materials Science in Semiconductor Processing. 155 (2023) - p. 107250 , 2023

Link: https://doi.org/10.1016/..

2

Investigation of self-nucleated skyrmion states in the ferr..:

Vetrova, Iu. V. ; Zelent, M. ; Šoltýs, J....
Applied Physics Letters. 118 (2021) 21 - p. , 2021

Link: https://doi.org/10.1063/..

3

Semi-insulating GaN for vertical structures: role of substr..:

Šichman, P. ; Hasenöhrl, S. ; Stoklas, R....
Materials Science in Semiconductor Processing. 118 (2020) - p. 105203 , 2020

Link: https://doi.org/10.1016/..

4

Investigation of interfaces and threshold voltage instabili..:

Pohorelec, O. ; Ťapajna, M. ; Gregušová, D....
Applied Surface Science. 528 (2020) - p. 146824 , 2020

Link: https://doi.org/10.1016/..

5

Characterization of interface states in AlGaN/GaN metal-oxi..:

Stoklas, R. ; Gregušová, D. ; Hasenöhrl, S....
Applied Surface Science. 461 (2018) - p. 255-259 , 2018

Link: https://doi.org/10.1016/..

6

Technology and application of in-situ AlOx layers on III-V ..:

Kúdela, R. ; Šoltýs, J. ; Kučera, M....
Applied Surface Science. 461 (2018) - p. 33-38 , 2018

Link: https://doi.org/10.1016/..

7

Properties of InGaAs/GaAs metal-oxide-semiconductor heteros..:

Gregušová, D. ; Gucmann, F. ; Kúdela, R....
Applied Surface Science. 395 (2017) - p. 140-144 , 2017

Link: https://doi.org/10.1016/..

8

Temperature-induced instability of the threshold voltage in..:

Florovič, M ; Stoklas, R ; Kováč, J.
Semiconductor Science and Technology. 32 (2017) 2 - p. 025017 , 2017

Link: https://doi.org/10.1088/..

9

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxi..:

Stoklas, R ; Gregušová, D ; Blaho, M...
Semiconductor Science and Technology. 32 (2017) 4 - p. 045018 , 2017

Link: https://doi.org/10.1088/..

10

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-..:

Ťapajna, M. ; Stoklas, R. ; Gregušová, D....
Applied Surface Science. 426 (2017) - p. 656-661 , 2017

Link: https://doi.org/10.1016/..

11

Origin of positive fixed charge at insulator/AlGaN interfac..:

Matys, M. ; Stoklas, R. ; Blaho, M..
Applied Physics Letters. 110 (2017) 24 - p. , 2017

Link: https://doi.org/10.1063/..

12

Characterization of capture cross sections of interface sta..:

Matys, M. ; Stoklas, R. ; Kuzmik, J....
Journal of Applied Physics. 119 (2016) 20 - p. , 2016

Link: https://doi.org/10.1063/..

13

On the origin of interface states at oxide/III-nitride hete..:

Matys, M. ; Adamowicz, B. ; Domanowska, A....
Journal of Applied Physics. 120 (2016) 22 - p. , 2016

Link: https://doi.org/10.1063/..

14

Low- and high-frequency capacitance of aluminum gallium nit..:

Osvald, J. ; Stoklas, R. ; Kordoš, P.
Materials Science in Semiconductor Processing. 31 (2015) - p. 525-529 , 2015

Link: https://doi.org/10.1016/..

15

InGaAs/GaAs metal-oxide-semiconductor heterostructure field..:

Gucmann, F. ; Gregušová, D. ; Stoklas, R....
Applied Physics Letters. 105 (2014) 18 - p. 183504 , 2014

Link: https://doi.org/10.1063/..