E-LIB Suche - Ergebnisse für: Stoklas, Roman

1

Growth of N-polar In-rich InAlN by metal organic chemical v..:

Hasenöhrl, Stanislav ; Blaho, Michal ; Dobročka, Edmund...
Materials Science in Semiconductor Processing. 156 (2023) - p. 107290 , 2023

Link: https://doi.org/10.1016/..

2

Mg Doping of N-Polar, In-Rich InAlN:

Kuzmík, Ján ; Pohorelec, Ondrej ; Hasenöhrl, Stanislav...
Materials. 16 (2023) 6 - p. 2250 , 2023

Link: https://doi.org/10.3390/..

3

Vertical GaN Transistor with Semi‐Insulating Channel:

Šichman, Peter ; Stoklas, Roman ; Hasenöhrl, Stanislav...
physica status solidi (a). , 2023

Link: https://doi.org/10.1002/..

4

Skyrmion Formation in Nanodisks Using Magnetic Force Micros..:

Zelent, Mateusz ; Vetrova, Iuliia V. ; Šoltýs, Jan...
Nanomaterials. 11 (2021) 10 - p. 2627 , 2021

Link: https://doi.org/10.3390/..

5

InN crystal habit, structural, electrical, and optical prop..:

Gucmann, Filip ; Kučera, Michal ; Hasenöhrl, Stanislav...
Semiconductor Science and Technology. 36 (2021) 7 - p. 075025 , 2021

Link: https://doi.org/10.1088/..

6

GaAs Nanomembranes in the High Electron Mobility Transistor..:

Gregušová, Dagmar ; Dobročka, Edmund ; Eliáš, Peter...
Materials. 14 (2021) 13 - p. 3461 , 2021

Link: https://doi.org/10.3390/..

7

High carrier mobility epitaxially aligned PtSe2 films grown..:

Sojková, Michaela ; Dobročka, Edmund ; Hutár, Peter...
Applied Surface Science. 538 (2021) - p. 147936 , 2021

Link: https://doi.org/10.1016/..

8

Growth and Properties of N‐Polar InN/InAlN Heterostructures:

Hasenöhrl, Stanislav ; Dobročka, Edmund ; Stoklas, Roman...
physica status solidi (a). 217 (2020) 19 - p. , 2020

Link: https://doi.org/10.1002/..

9

InGaN/(GaN)/AlGaN/GaN normally-off metal-oxide-semiconducto..:

Gregušová, Dagmar ; Tóth, Lajos ; Pohorelec, Ondrej...
Japanese Journal of Applied Physics. 58 (2019) SC - p. SCCD21 , 2019

Link: https://doi.org/10.7567/..

10

Effect of temperature and carrier gas on the properties of ..:

Chauhan, Prerna ; Hasenöhrl, Stanislav ; Dobročka, Edmund...
Applied Surface Science. 470 (2019) - p. 1-7 , 2019

Link: https://doi.org/10.1016/..

11

Generation of hole gas in non-inverted InAl(Ga)N/GaN hetero..:

Hasenöhrl, Stanislav ; Chauhan, Prerna ; Dobročka, Edmund...
Applied Physics Express. 12 (2018) 1 - p. 014001 , 2018

Link: https://doi.org/10.7567/..

12

ZrO2/InAlN/GaN Metal–Oxide–Semiconductor Heterostructure Fi..:

Gregušová, Dagmar ; Hušeková, Kristína ; Stoklas, Roman...
Japanese Journal of Applied Physics. 52 (2013) 8S - p. 08JN07 , 2013

Link: https://doi.org/10.7567/..

13

Zinc-doped gallium phosphide nanowires for photovoltaic str..:

Hasenöhrl, Stanislav ; Eliáš, Peter ; Šoltýs, Ján...
Applied Surface Science. 269 (2013) - p. 72-76 , 2013

Link: https://doi.org/10.1016/..

14

Electrical properties of individual GaP nanowires doped by ..:

Novak, Jozef ; Šoltýs, Ján ; Eliáš, Peter...
physica status solidi (a). 209 (2012) 12 - p. 2505-2509 , 2012

Link: https://doi.org/10.1002/..

15

Oxidized Al Film as an Insulation Layer in AlGaN/GaN Metal–..:

Gregušová, Dagmar ; Gaži, Štefan ; Sofer, Zdeněk...
Japanese Journal of Applied Physics. 49 (2010) 4R - p. 046504 , 2010

Link: https://doi.org/10.1143/..