E-LIB Suche - Ergebnisse für: Su, Yongbo

1

The effects and mechanisms of 2 MeV proton irradiation on h..:

Liu, Runkun ; Mei, Bo ; Su, Yongbo...
Solid-State Electronics. 212 (2024) - p. 108832 , 2024

Link: https://doi.org/10.1016/..

2

A Waveguide Reconfigurable Multiband Terahertz Frequency Do..:

Wei, Haomiao ; Zhang, Yong ; Wang, Li...
IEEE Transactions on Microwave Theory and Techniques. , 2024

Link: https://doi.org/10.1109/..

3

The Study on Single-Event Effects and Hardening Analysis of..:

Zhao, Xiaohong ; Su, Yongbo ; Chen, You...
Micromachines. 15 (2024) 4 - p. 527 , 2024

Link: https://doi.org/10.3390/..

4

Intrinsic point defects investigation in InAlAs with extrap..:

Fang, Yuxin ; Zhang, Jialin ; Su, Yongbo..
Microelectronics Journal. 147 (2024) - p. 106168 , 2024

Link: https://doi.org/10.1016/..

5

Origin and suppression of kink effect in InP high electron ..:

Zhou, Fu-gui ; Feng, Rui-ze ; Cao, Shu-rui...
Applied Physics Letters. 124 (2024) 6 - p. , 2024

Link: https://doi.org/10.1063/..

6

A broadband ECL static frequency divider in InP DHBT using ..:

Xu, Yifei ; Lou, Jiaxin ; Su, Yongbo.
IEICE Electronics Express. 21 (2024) 2 - p. 20230507-20230507 , 2024

Link: https://doi.org/10.1587/..

7

A Four-Port Noise De-Embedding Methodology for On-Wafer Mic..:

Feng, Zhiyu ; Ding, Wucang ; Su, Yongbo...
IEEE Microwave and Wireless Technology Letters. , 2024

Link: https://doi.org/10.1109/..

8

Performance Improvement by SiO₂ Hardmask in 100-nm InP-Base..:

Cao, Shurui ; Feng, Ruize ; Zhou, Fugui...
IEEE Transactions on Electron Devices. 70 (2023) 5 - p. 2262-2267 , 2023

Link: https://doi.org/10.1109/..

9

Enhanced Darlington fT-doubler Structure in a 25 GS/s Track..:

Xiao, Luning ; Zhen, Wenxiang ; Su, Yongbo.
IEICE Electronics Express. , 2023

Link: https://doi.org/10.1587/..

10

An Accurate Model for InP HEMT Small-Signal Equivalent Circ..:

Feng, Zhiyu ; Cao, Shurui ; Feng, Ruize...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 934-940 , 2023

Link: https://doi.org/10.1109/..

11

Improving the RF Performance of InP DHBT Using fT-Doubler T..:

Zhu, Zhaochen ; Ding, Wuchang ; Wang, Yanzhe...
IEEE Microwave and Wireless Technology Letters. 33 (2023) 12 - p. 1615-1618 , 2023

Link: https://doi.org/10.1109/..

12

Effect of proton irradiation on interfacial and electrical ..:

Zhang, Chen ; Su, Yongbo ; Mei, Bo...
Current Applied Physics. 48 (2023) - p. 47-52 , 2023

Link: https://doi.org/10.1016/..

13

Impact of SiO2 hardmask on the DC and RF characteristics of..:

Zhou, Fugui ; Feng, Ruize ; Cao, Shurui...
Journal of Materials Science: Materials in Electronics. 34 (2023) 29 - p. , 2023

Link: https://doi.org/10.1007/..

14

Small-signal behavioral-level modeling of InP HBT based on ..:

Dong, Jianping ; Su, Yongbo ; Mei, Bo...
Solid-State Electronics. 209 (2023) - p. 108784 , 2023

Link: https://doi.org/10.1016/..

15

Accurate Modeling Approach for InP fT-Doubler Based on Elec..:

Wang, Yanzhe ; Ding, Jianjun ; Feng, Ruize...
IEEE Transactions on Electron Devices. 70 (2023) 3 - p. 941-946 , 2023

Link: https://doi.org/10.1109/..