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Sudarshan, Tangali S.
92  Ergebnisse:
Personensuche X
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1

Glide of threading edge dislocations after basal plane disl..:

Abadier, Mina ; Song, Haizheng ; Sudarshan, Tangali S...
Journal of Crystal Growth.  418 (2015)  - p. 7-14 , 2015
Link: https://doi.org/10.1016/..
 
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2

Site Specific TEM Specimen Preparation for Characterization..:

Abadier, Mina ; Myers-Ward, Rachael L. ; Song, Haizheng...
Microscopy and Microanalysis.  20 (2014)  S3 - p. 344-345 , 2014
Link: https://doi.org/10.1017/..
 
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3

An Approach to Trace Defects Propagation during SiC Epitaxy:

Fan, Ya Ming ; Zhang, Li Guo ; Wang, Jie...
Materials Science Forum.  778-780 (2014)  - p. 147-150 , 2014
Link: https://doi.org/10.4028/..
 
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4

Study of Surface Morphology, Impurity Incorporation and Def..:

Song, Haizheng ; Chandrashekhar, M. V. S. ; Sudarshan, Tangali S.
ECS Journal of Solid State Science and Technology.  4 (2014)  3 - p. P71-P76 , 2014
Link: https://doi.org/10.1149/..
 
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5

Large barrier, highly uniform and reproducible Ni-Si/4H-SiC..:

Omar, Sabih U ; Sudarshan, Tangali S ; Rana, Tawhid A..
Journal of Physics D: Applied Physics.  47 (2014)  29 - p. 295102 , 2014
Link: https://doi.org/10.1088/..
 
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6

Vapor phase surface preparation (etching) of 4H–SiC substra..:

Rana, T. ; Chandrashekhar, M.V.S. ; Sudarshan, Tangali S.
Journal of Crystal Growth.  380 (2013)  - p. 61-67 , 2013
Link: https://doi.org/10.1016/..
 
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7

Basal plane dislocation conversion near the epilayer/substr..:

Song, Haizheng ; Sudarshan, Tangali S.
Journal of Crystal Growth.  371 (2013)  - p. 94-101 , 2013
Link: https://doi.org/10.1016/..
 
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8

Trade-Off between Parasitic Deposition and SiC Homoepitaxia..:

Sudarshan, Tangali S. ; Rana, Tawhid ; Song, Haizheng.
ECS Journal of Solid State Science and Technology.  2 (2013)  8 - p. N3079-N3086 , 2013
Link: https://doi.org/10.1149/..
 
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9

Step dynamics in the homoepitaxial growth of 6H-SiC by chem..:

Omar, Sabih U. ; Chandrashekhar, M. V. S. ; Chowdhury, Iftekhar A...
Journal of Applied Physics.  113 (2013)  18 - p. , 2013
Link: https://doi.org/10.1063/..
 
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10

Comparison of SiC Epitaxial Growth from Dichlorosilane and ..:

Song, Haizheng ; Rana, Tawhid ; Chandrashekhar, M.V.S...
ECS Transactions.  58 (2013)  4 - p. 97-109 , 2013
Link: https://doi.org/10.1149/..
 
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11

Evidence of Electrochemical Graphene Functionalization by R..:

Daniels, Kevin M. ; Daas, Biplob K. ; Srivastava, Nishtha...
Materials Science Forum.  717-720 (2012)  - p. 661-664 , 2012
Link: https://doi.org/10.4028/..
 
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12

Investigation of Basal Plane Dislocation Reduction/Eliminat..:

Song, Hai Zheng ; Sudarshan, Tangali S.
Materials Science Forum.  717-720 (2012)  - p. 125-128 , 2012
Link: https://doi.org/10.4028/..
 
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13

Behavior of Particles in the Growth Reactor and their Effec..:

Rana, Tawhid ; Song, Hai Zheng ; Chandrashekhar, M.V.S..
Materials Science Forum.  717-720 (2012)  - p. 153-156 , 2012
Link: https://doi.org/10.4028/..
 
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14

Comparison of 4H Silicon Carbide Epitaxial Growths at Vario..:

Rana, Tawhid ; Song, Hai Zheng ; Chandrashekhar, M.V.S..
Materials Science Forum.  717-720 (2012)  - p. 117-120 , 2012
Link: https://doi.org/10.4028/..
 
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15

In-Grown Stacking Faults in SiC-CVD Using Dichlorosilane an..:

Song, Hai Zheng ; Omar, Sabih U. ; Rana, Tawhid..
Materials Science Forum.  717-720 (2012)  - p. 121-124 , 2012
Link: https://doi.org/10.4028/..
 
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