E-LIB Suche - Ergebnisse für: Sugawara, Katsutoshi

1

Improvement of Surge Current Capability of 3.3 kV SBD-Embed..:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),

Okimoto, Shigeru ; Hironaka, Yoichi ; Hatori, Kenji... - p. P.1-P.2 , 2023

Link: https://doi.org/10.23919..

2

Improving Surge Current Capability of SBD-Embedded SiC-MOSF..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Iijima, Akifumi ; Kawahara, Koutarou ; Sugawara, Katsutoshi... - p. 238-241 , 2023

Link: https://doi.org/10.1109/..

3

Effects of Grounding Bottom Oxide Protection Layer in Trenc..:

Fukui, Yutaka ; Sugawara, Katsutoshi ; Tanaka, Rina...
Materials Science Forum. 1004 (2020) - p. 764-769 , 2020

Link: https://doi.org/10.4028/..

4

Performance Improvement of Trench-Gate SiC MOSFETs by Local..:

Tanaka, Rina ; Sugawara, Katsutoshi ; Fukui, Yutaka...
Materials Science Forum. 1004 (2020) - p. 770-775 , 2020

Link: https://doi.org/10.4028/..

5

Impact of Stripe Trench-Gate Structure for 4H-SiC Trench MO..:

Fukui, Yutaka ; Sugawara, Katsutoshi ; Adachi, Kohei...
Materials Science Forum. 924 (2018) - p. 761-764 , 2018

Link: https://doi.org/10.4028/..

6

Carrier properties of B atomic-layer-doped Si films grown b..:

Sakuraba, Masao ; Sugawara, Katsutoshi ; Nosaka, Takayuki..
Science and Technology of Advanced Materials. 18 (2017) 1 - p. 294-306 , 2017

Link: https://doi.org/10.1080/..

7

Introduction of Depletion Stopper for Reduction of JFET Res..:

Kagawa, Yasuhiro ; Tanaka, Rina ; Fujiwara, Nobuo...
Materials Science Forum. 821-823 (2015) - p. 761-764 , 2015

Link: https://doi.org/10.4028/..

8

4H-SiC Trench MOSFET with Bottom Oxide Protection:

Kagawa, Yasuhiro ; Fujiwara, Nobuo ; Sugawara, Katsutoshi...
Materials Science Forum. 778-780 (2014) - p. 919-922 , 2014

Link: https://doi.org/10.4028/..

9

Impact of grounding the bottom oxide protection layer on th..:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),

Tanaka, Rina ; Kagawa, Yasuhiro ; Fujiwara, Nobuo... - p. 75-78 , 2014

Link: https://doi.org/10.1109/..

10

Electrical characteristics of thermal CVD B-doped Si films ..:

Sugawara, Katsutoshi ; Sakuraba, Masao ; Murota, Junichi
Thin Solid Films. 518 (2010) 6 - p. S57-S61 , 2010

Link: https://doi.org/10.1016/..

11

Atomically Controlled Plasma Processing for Epitaxial Growt..:

Sakuraba, Masao ; Sugawara, Katsutoshi ; Murota, Junichi
ECS Transactions. 25 (2009) 7 - p. 229-236 , 2009

Link: https://doi.org/10.1149/..

12

Very low-temperature epitaxial growth of silicon and german..:

Sakuraba, Masao ; Muto, Daisuke ; Mori, Masaki..
Thin Solid Films. 517 (2008) 1 - p. 10-13 , 2008

Link: https://doi.org/10.1016/..

13

Thermal effect on strain relaxation in Ge films epitaxially..:

Sugawara, Katsutoshi ; Sakuraba, Masao ; Murota, Junichi
Thin Solid Films. 508 (2006) 1-2 - p. 143-146 , 2006

Link: https://doi.org/10.1016/..

14

Epitaxial growth of highly strained Si on relaxed Ge/Si(1 0..:

Sugawara, Katsutoshi ; Sakuraba, Masao ; Murota, Junichi
Semiconductor Science and Technology. 22 (2006) 1 - p. S42-S45 , 2006

Link: https://doi.org/10.1088/..

15

Atomically controlled Ge epitaxial growth on Si(1 0 0) in A..:

Sugawara, Katsutoshi ; Sakuraba, Masao ; Murota, Junichi
Materials Science in Semiconductor Processing. 8 (2005) 1-3 - p. 69-72 , 2005

Link: https://doi.org/10.1016/..