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X
Sun, Dian-Zhao
1667  Ergebnisse:
Personensuche X
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1

Hydrogen behavior in GaN epilayers grown by NH3-MBE:

Kong, Mei-Ying ; Zhang, Jian-Ping ; Wang, Xiao-Liang.
Journal of Crystal Growth.  227-228 (2001)  - p. 371-375 , 2001
Link: https://doi.org/10.1016/..
 
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2

Hydrogen-dependent lattice dilation in GaN:

Zhang, Jian-Ping ; Wang, Xiao-Liang ; Sun, Dian-Zhao.
Semiconductor Science and Technology.  15 (2000)  6 - p. 619-621 , 2000
Link: https://doi.org/10.1088/..
 
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3

Energy band and acceptor binding energy of GaN and AlxGa1−x:

Xia, Jian-Bai ; Cheah, K.W ; Wang, Xiao-Liang..
Materials Science and Engineering: B.  75 (2000)  2-3 - p. 204-206 , 2000
Link: https://doi.org/10.1016/..
 
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4

p-Type co-doping study of GaN by photoluminescence:

Zhang, Jian-Ping ; Sun, Dian-Zhao ; Wang, Xiao-Liang...
Journal of Crystal Growth.  197 (1999)  1-2 - p. 368-371 , 1999
Link: https://doi.org/10.1016/..
 
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5

Electrical properties of GaN deposited on nitridated sapphi..:

Zhang, Jian-Ping ; Sun, Dian-Zhao ; Li, Xiao-Bing...
Journal of Crystal Growth.  201-202 (1999)  - p. 429-432 , 1999
Link: https://doi.org/10.1016/..
 
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6

The growth of an AlGaN/GaN modulation-doped heterostructure..:

Zhang, Jian-Ping ; Sun, Dian-Zhao ; Li, Xiao-Bing...
Journal of Crystal Growth.  192 (1998)  1-2 - p. 93-96 , 1998
Link: https://doi.org/10.1016/..
 
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7

The effect of buried AlxGa1−xN isolating layers on the tran..:

Zhang, Jian-Ping ; Sun, Dian-Zhao ; Wang, Xiao-Liang...
Journal of Crystal Growth.  192 (1998)  3-4 - p. 471-474 , 1998
Link: https://doi.org/10.1016/..
 
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8

Fermi-edge singularity observed in a modulation-doped AlGaN..:

Zhang, Jian-Ping ; Sun, Dian-Zhao ; Wang, Xiao-Liang...
Applied Physics Letters.  73 (1998)  17 - p. 2471-2472 , 1998
Link: https://doi.org/10.1063/..
 
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9

High-concentration hydrogen in unintentionally doped GaN:

Zhang, Jian-Ping ; Wang, Xiao-Liang ; Sun, Dian-Zhao..
Journal of Crystal Growth.  189-190 (1998)  - p. 566-569 , 1998
Link: https://doi.org/10.1016/..
 
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10

Interfacial behaviour of quantum well electrode|electrolyte..:

Liu, Yao ; Xia, Xu-Rui ; Wang, Ruo-Zhen...
Journal of Electroanalytical Chemistry.  429 (1997)  1-2 - p. 55-60 , 1997
Link: https://doi.org/10.1016/..
 
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11

Interfacial behaviour of a quantum well electrode|electroly..:

Liu, Yao ; Xiao, Xu-Rui ; Wang, Ruo-Zhen...
Journal of Electroanalytical Chemistry.  430 (1997)  1-2 - p. 91-95 , 1997
Link: https://doi.org/10.1016/..
 
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12

Photoluminescence studies on the interaction of near-surfac..:

Liu, Yao ; Xiao, Xu-Rui ; Li, Xue-Ping...
Journal of Photochemistry and Photobiology A: Chemistry.  101 (1996)  2-3 - p. 113-117 , 1996
Link: https://doi.org/10.1016/..
 
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13

EER studies of the single quantum well GaAs/AlxGa1−xAs elec..:

Liu, Yao ; Xiao, Xu-Rui ; Wang, Ruo-Zhen...
Chemical Physics Letters.  256 (1996)  3 - p. 312-316 , 1996
Link: https://doi.org/10.1016/..
 
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14

Diffusion of Ion Implanted As in Si1-xGexEpilayers:

Lyu-fan), Zou Lü-fan (Zou ; Zhan-guo, Wang ; Dian-zhao, Sun...
Chinese Physics Letters.  14 (1997)  1 - p. 51-54 , 1997
Link: https://doi.org/10.1088/..
 
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15

Damage Removal and Strain Relaxation in As+-Implanted Si0.5..:

Lyu-fan), Zou Lü-fan (Zou ; Zhan-guo, Wang ; Dian-zhao, Sun...
Chinese Physics Letters.  14 (1997)  3 - p. 209-212 , 1997
Link: https://doi.org/10.1088/..
 
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