Surisetty, C.
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Air spacer for 10nm FinFET CMOS and beyond:

, In: 2016 IEEE International Electron Devices Meeting (IEDM),
Cheng, K. ; Surisetty, C. ; Muthinti, R.... - p. 17.1.1-17.1.4 , 2016
 
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Utility of Oxy-Anions for Selective Low Pressure Polishing ..:

Surisetty, C. V. V. S. ; Peethala, B. C. ; Roy, D..
Electrochemical and Solid-State Letters.  13 (2010)  7 - p. H244 , 2010
 
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