E-LIB Suche - Ergebnisse für: Suvanam, Sethu Saveda

1

Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu2..:

Englund, Sven ; Kubart, Tomas ; Keller, Jan...
physica status solidi (a). 216 (2019) 22 - p. , 2019

2

Extreme radiation hard thin film CZTSSe solar cell:

Suvanam, Sethu Saveda ; Larsen, Jes ; Ross, Nils...
Solar Energy Materials and Solar Cells. 185 (2018) - p. 16-20 , 2018

Link: https://doi.org/10.1016/..

3

Radiation Hardness for Silicon Oxide and Aluminum Oxide on ..:

Hallén, Anders ; Suvanam, Sethu Saveda
Materials Science Forum. 924 (2018) - p. 229-232 , 2018

Link: https://doi.org/10.4028/..

4

Improving the quality of Al2O3/4H-SiC interface for device ..:

Usman, Muhammad ; Suvanam, Sethu Saveda ; Linnarsson, M.K..
Materials Science in Semiconductor Processing. 81 (2018) - p. 118-121 , 2018

Link: https://doi.org/10.1016/..

5

Improved interface and electrical properties of atomic laye..:

Suvanam, Sethu Saveda ; Usman, Muhammed ; Martin, David...
Applied Surface Science. 433 (2018) - p. 108-115 , 2018

Link: https://doi.org/10.1016/..

6

Influence of annealing environment on the ALD-Al2O3/4H-SiC ..:

Usman, Muhammad ; Arshad, Muhammad ; Suvanam, Sethu Saveda.
Journal of Physics D: Applied Physics. 51 (2018) 10 - p. 105111 , 2018

Link: https://doi.org/10.1088/..

7

Impact of H‐Uptake from Forming Gas Annealing and Ion Impla..:

Chulapakorn, Thawatchart ; Primetzhofer, Daniel ; Sychugov, Ilya...
physica status solidi (a). 215 (2017) 3 - p. , 2017

Link: https://doi.org/10.1002/..

8

Total Dose Effects on 4H-SiC Bipolar Junction Transistors:

Suvanam, Sethu Saveda ; Lanni, Luigia ; Malm, B. Gunnar..
Materials Science Forum. 897 (2017) - p. 579-582 , 2017

Link: https://doi.org/10.4028/..

9

Bipolar integrated circuits in SiC for extreme environment ..:

Zetterling, Carl-Mikael ; Hallén, Anders ; Hedayati, Raheleh...
Semiconductor Science and Technology. 32 (2017) 3 - p. 034002 , 2017

Link: https://doi.org/10.1088/..

10

Alkali Metal Re-Distribution after Oxidation of 4H-SiC:

Linnarsson, Margareta K. ; Suvanam, Sethu Saveda ; Vines, Lasse.
Materials Science Forum. 858 (2016) - p. 677-680 , 2016

Link: https://doi.org/10.4028/..

11

Interface Analysis of P-Type 4H-SiC/Al2O3 Using Synchrotron..:

Suvanam, Sethu Saveda ; Yazdi, Milad Ghadami ; Usman, Muhammad..
Materials Science Forum. 858 (2016) - p. 693-696 , 2016

Link: https://doi.org/10.4028/..

12

Stoichiometry of the ALD-Al2O3/4H–SiC interface by synchrot..:

Usman, Muhammad ; Suvanam, Sethu Saveda ; Yazdi, Milad Ghadami...
Journal of Physics D: Applied Physics. 49 (2016) 25 - p. 255308 , 2016

Link: https://doi.org/10.1088/..

13

Tailoring the Interface between Dielectric and 4H-SiC by Io..:

Suvanam, Sethu Saveda ; Martin, David M. ; Zetterling, Carl-Mikael.
Materials Science Forum. 821-823 (2015) - p. 488-491 , 2015

Link: https://doi.org/10.4028/..

14

Characterization of LaxHfyO Gate Dielectrics in 4H-SiC MOS ..:

Xia, Jing Hua ; Martin, David M. ; Suvanam, Sethu Saveda..
Materials Science Forum. 778-780 (2014) - p. 549-552 , 2014

Link: https://doi.org/10.4028/..

15

A Comparison of Free Carrier Absorption and Capacitance Vol..:

Suvanam, Sethu Saveda ; Usman, M. ; Gulbinas, K...
Materials Science Forum. 740-742 (2013) - p. 465-468 , 2013

Link: https://doi.org/10.4028/..