E-LIB Suche - Ergebnisse für: Többen

1

Screening Breakdown on the Route toward the Metal-Insulator..:

Wilamowski, Z. ; Sandersfeld, N. ; Jantsch, W...
Physical Review Letters. 87 (2001) 2 - p. , 2001

Link: https://doi.org/10.1103/..

2

Aluminum dual damascene metallization for 0.175 μm DRAM gen..:

Schnabel, R.F ; Clevenger, L.A ; Costrini, G...
Microelectronic Engineering. 50 (2000) 1-4 - p. 265-270 , 2000

Link: https://doi.org/10.1016/..

3

High Temperature Subatmospheric Chemical Vapor Deposited Un..:

Xia, L. ‐Q. ; Nemani, S. ; Galiano, M....
Journal of The Electrochemical Society. 146 (1999) 3 - p. 1181-1185 , 1999

Link: https://doi.org/10.1149/..

4

Transport in silicon/germanium nanostructures:

Holzmann, M. ; Többen, D. ; Abstreiter, G.
Applied Surface Science. 102 (1996) - p. 230-236 , 1996

Link: https://doi.org/10.1016/..

5

Magnetotransport of electrons in arrays of wires in Si/Si0...:

Holzmann, M. ; Többen, D. ; Baumgartner, P....
Surface Science. 361-362 (1996) - p. 673-676 , 1996

Link: https://doi.org/10.1016/..

6

Quantized conductance in a split-gate device and impurity-r..:

Többen, D ; Wharam, D.A ; Abstreiter, G..
Solid-State Electronics. 40 (1996) 1-8 - p. 405-408 , 1996

Link: https://doi.org/10.1016/..

7

One-dimensional transport of electrons in Si/Si0.7Ge0.3 het..:

Holzmann, M. ; Többen, D. ; Abstreiter, G....
Applied Physics Letters. 66 (1995) 7 - p. 833-835 , 1995

Link: https://doi.org/10.1063/..

8

Ballistic electron transport through a quantum point contac..:

Tobben, D ; Wharam, D A ; Abstreiter, G..
Semiconductor Science and Technology. 10 (1995) 5 - p. 711-714 , 1995

Link: https://doi.org/10.1088/..

9

In-plane-gate transistors fabricated from Si/SiGe heterostr..:

Többen, D. ; de Vries, D. K. ; Wieck, A. D....
Applied Physics Letters. 67 (1995) 11 - p. 1579-1581 , 1995

Link: https://doi.org/10.1063/..

10

Antidot superlattices in two-dimensional hole gases confine..:

Tobben, D ; Holzmann, M ; Abstreiter, G...
Semiconductor Science and Technology. 10 (1995) 10 - p. 1413-1417 , 1995

Link: https://doi.org/10.1088/..

11

Growth and properties of high-mobility two-dimensional hole..:

Nützel, J.F. ; Engelhardt, C.M. ; Wiesner, R....
Journal of Crystal Growth. 150 (1995) - p. 1011-1014 , 1995

Link: https://doi.org/10.1016/..

12

Field-effect induced electron channels in a Si/Si0.7Ge0.3 h..:

Holzmann, M. ; Többen, D. ; Abstreiter, G..
Journal of Applied Physics. 76 (1994) 6 - p. 3917-3919 , 1994

Link: https://doi.org/10.1063/..

13

High mobility 2-D hole gases in strained Ge channels on Si ..:

Engelhardt, C.M. ; Többen, D. ; Aschauer, M....
Solid-State Electronics. 37 (1994) 4-6 - p. 949-952 , 1994

Link: https://doi.org/10.1016/..

14

High mobility two-dimensional electron gases in Si⧸Si1-xGex..:

Többen, D. ; Schäffler, F. ; Besson, M....
Journal of Crystal Growth. 127 (1993) 1-4 - p. 421-424 , 1993

Link: https://doi.org/10.1016/..

15

Magnetotransport studies of remote doped Si/Si1−xGex hetero..:

Többen, D. ; Schäffler, F. ; Zrenner, A..
Thin Solid Films. 222 (1992) 1-2 - p. 15-19 , 1992

Link: https://doi.org/10.1016/..