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X
Takagi, Shin-ichi
1153  Ergebnisse:
Personensuche X
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1

Preparation of Diamond-Like Carbon on Ti Film with Tetramet..:

Kaneko, Satoru ; Horiuchi, Takahiro ; Ito, Takeshi...
Japanese Journal of Applied Physics.  52 (2013)  11S - p. 11NA02 , 2013
Link: https://doi.org/10.7567/..
 
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2

Single Source Heterojunction Metal–Oxide–Semiconductor Tran..:

Mizuno, Tomohisa ; Moriyama, Yoshihiko ; Tezuka, Tsutomu..
Japanese Journal of Applied Physics.  50 (2011)  1R - p. 010107 , 2011
Link: https://doi.org/10.7567/..
 
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3

Single Source Heterojunction Metal–Oxide–Semiconductor Tran..:

Mizuno, Tomohisa ; Moriyama, Yoshihiko ; Tezuka, Tsutomu..
Japanese Journal of Applied Physics.  50 (2011)  1R - p. 010107 , 2011
Link: https://doi.org/10.1143/..
 
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4

Experimental Determination of Shear Stress induced Electron..:

Weber, Olivier ; Takenaka, Mitsuru ; Takagi, Shin-ichi
Japanese Journal of Applied Physics.  49 (2010)  7R - p. 074101 , 2010
Link: https://doi.org/10.1143/..
 
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5

Study of the surface cleaning of GOI and SGOI substrates fo..:

Moriyama, Yoshihiko ; Hirashita, Norio ; Usuda, Koji...
Applied Surface Science.  256 (2009)  3 - p. 823-829 , 2009
Link: https://doi.org/10.1016/..
 
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6

Structural analyses of strained SiGe wires formed by hydrog..:

Tezuka, Tsutomu ; Toyoda, Eiji ; Irisawa, Toshifumi...
Applied Physics Letters.  94 (2009)  8 - p. , 2009
Link: https://doi.org/10.1063/..
 
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7

{110}-facets formation by hydrogen thermal etching on sidew..:

Tezuka, Tsutomu ; Hirashita, Norio ; Moriyama, Yoshihiko...
Applied Physics Letters.  92 (2008)  19 - p. , 2008
Link: https://doi.org/10.1063/..
 
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8

Effects of Si passivation on Ge metal-insulator-semiconduct..:

Taoka, Noriyuki ; Harada, Masatomi ; Yamashita, Yoshimi...
Applied Physics Letters.  92 (2008)  11 - p. , 2008
Link: https://doi.org/10.1063/..
 
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9

Planar defect formation mechanism in Ge-rich SiGe-on-insula..:

Hirashita, Norio ; Nakaharai, Shu ; Moriyama, Yoshihiko...
Thin Solid Films.  517 (2008)  1 - p. 407-411 , 2008
Link: https://doi.org/10.1016/..
 
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10

Performance of Germanium Metal-Insulator-Semiconductor Fiel..:

Taoka, Noriyuki ; Ikeda, Keiji ; Yamamoto, Toyoji...
ECS Transactions.  13 (2008)  1 - p. 275-285 , 2008
Link: https://doi.org/10.1149/..
 
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11

Deformation Induced Holes in Ge-Rich SiGe-on-Insulator and ..:

Hirashita, Norio ; Moriyama, Yoshihiko ; Nakaharai, Shu...
Applied Physics Express.  1 (2008)  - p. 101401 , 2008
Link: https://doi.org/10.1143/..
 
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12

Characterization of anisotropic relaxation rate of SGOI (11..:

Moriyama, Yoshihiko ; Hirashita, Norio ; Sugiyama, Naoharu.
Thin Solid Films.  517 (2008)  1 - p. 285-288 , 2008
Link: https://doi.org/10.1016/..
 
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13

Variation of Threshold Voltage in Strained Si Metal–Oxide–S..:

Sugiyama, Naoharu ; Numata, Toshinori ; Hirashita, Norio..
Japanese Journal of Applied Physics.  47 (2008)  6R - p. 4403 , 2008
Link: https://doi.org/10.1143/..
 
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14

Uniaxially Strained Si/SiGe Wire-Channel Transistors:

Tezuka, Tsutomu ; Irisawa, Toshifumi ; Toyoda, Eiji..
ECS Transactions.  13 (2008)  1 - p. 263-274 , 2008
Link: https://doi.org/10.1149/..
 
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15

Ultrathin Ge-on-Insulator Metal Source/Drain p-Channel Meta..:

Uehara, Takashi ; Matsubara, Hiroshi ; Nakane, Ryosho..
Japanese Journal of Applied Physics.  46 (2007)  4S - p. 2117 , 2007
Link: https://doi.org/10.1143/..
 
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