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Takahashi, Yoshinao
208  Ergebnisse:
Personensuche X
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1

Chlorine Trifluoride Gas Etching Design for Quickly and Uni..:

Hayashi, Masaya ; Habuka, Hitoshi ; Takahashi, Yoshinao.
ECS Advances.  1 (2022)  4 - p. 044001 , 2022
Link: https://doi.org/10.1149/..
 
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2

Semisynthesis of Antitrypanosomal p-Quinone Analog Possesin..:

Aoyagi, Yutaka ; Fujiwara, Koji ; Takahashi, Yoshinao...
Chemical and Pharmaceutical Bulletin.  70 (2022)  4 - p. 300-303 , 2022
Link: https://doi.org/10.1248/..
 
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3

Lowest Concentration of Chlorine Trifluoride Gas for Cleani..:

Takizawa, Yuika ; Hayashi, Masaya ; Habuka, Hitoshi...
ECS Journal of Solid State Science and Technology.  11 (2022)  8 - p. 084005 , 2022
Link: https://doi.org/10.1149/..
 
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4

Anticorrosive Behavior of Aluminum Nitride Surface Exposed ..:

Haruguchi, Miyu ; Hayashi, Masaya ; Irikura, Kenta..
ECS Journal of Solid State Science and Technology.  10 (2021)  3 - p. 034006 , 2021
Link: https://doi.org/10.1149/..
 
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5

Recovery Method of Pyrolytic Carbon Surface after Exposure ..:

Hayashi, Masaya ; Kurashima, Keisuke ; Habuka, Hitoshi...
Advances in Chemical Engineering and Science.  11 (2021)  1 - p. 65-76 , 2021
Link: https://doi.org/10.4236/..
 
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6

Development of SiC Etching by Chlorine Fluoride Gas:

Takahashi, Yoshinao ; Kato, Korehito ; Habuka, Hitoshi
Materials Science Forum.  1004 (2020)  - p. 731-737 , 2020
Link: https://doi.org/10.4028/..
 
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7

Non-Plasma Dry Etcher Design for 200 mm-Diameter Silicon Ca..:

Kawasaki, Ryohei ; Irikura, Kenta ; Habuka, Hitoshi..
Materials Science Forum.  1004 (2020)  - p. 167-172 , 2020
Link: https://doi.org/10.4028/..
 
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8

Design of a Silicon Carbide Chemical Vapor Deposition React..:

Hayashi, Masaya ; Mamyouda, Takumi ; Habuka, Hitoshi...
ECS Journal of Solid State Science and Technology.  9 (2020)  10 - p. 104008 , 2020
Link: https://doi.org/10.1149/..
 
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9

SiC Epitaxial Reactor Cleaning by ClF3 Gas with the Help of..:

Kurashima, Keisuke ; Hayashi, Masaya ; Habuka, Hitoshi...
Materials Science Forum.  1004 (2020)  - p. 186-192 , 2020
Link: https://doi.org/10.4028/..
 
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10

Etching Rate Profile of C-Face 4H-SiC Wafer Depending on To..:

Irikura, Kenta ; Kawasaki, Ryohei ; Habuka, Hitoshi..
Materials Science Forum.  1004 (2020)  - p. 173-179 , 2020
Link: https://doi.org/10.4028/..
 
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11

High Temperature SiC Reactor Cleaning Using Chlorine Triflu..:

Kurashima, Keisuke ; Shioda, Kohei ; Habuka, Hitoshi...
Materials Science Forum.  963 (2019)  - p. 141-145 , 2019
Link: https://doi.org/10.4028/..
 
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12

High-Temperature Reactor Cleaning Using Chlorine Trifluorid..:

Kurashima, Keisuke ; Hayashi, Masaya ; Habuka, Hitoshi...
ECS Journal of Solid State Science and Technology.  8 (2019)  8 - p. P400-P406 , 2019
Link: https://doi.org/10.1149/..
 
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13

Exposure of Tantalum Carbide, Silicon Nitride and Aluminum ..:

Haruguchi, Miyu ; Kawasaki, Ryohei ; Habuka, Hitoshi.
ECS Journal of Solid State Science and Technology.  8 (2019)  3 - p. P175-P179 , 2019
Link: https://doi.org/10.1149/..
 
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14

Chlorine Trifluoride Gas Distributor Design for Single-Crys..:

Kurashima, Keisuke ; Kawasaki, Ryohei ; Irikura, Kenta...
Materials Science Forum.  963 (2019)  - p. 520-524 , 2019
Link: https://doi.org/10.4028/..
 
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15

Quick and Practical Cleaning Process for Silicon Carbide Ep..:

Shioda, Kohei ; Kurashima, Keisuke ; Habuka, Hitoshi...
Materials Science Forum.  924 (2018)  - p. 96-99 , 2018
Link: https://doi.org/10.4028/..
 
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