E-LIB Suche - Ergebnisse für: Takashi Suemasu, Takashi Suemasu - Sprache DE

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1

Exploration of Cd1−xZnxSe as a window layer for CIGS based ..:

Islam, Md Samiul ; Rashid, Mohammad Junaebur ; Akhtaruzzaman, Md...
Materials Research Express. 10 (2023) 12 - p. 126405 , 2023

Link: https://doi.org/10.1088/..

2

Donor and Acceptor Levels in Undoped β-FeSi2 Films Grown on..:

Ken-ichiro Takakura, Ken-ichiro Takakura ; Takashi Suemasu, Takashi Suemasu ; Fumio Hasegawa, Fumio Hasegawa
Japanese Journal of Applied Physics. 40 (2001) 3B - p. L249 , 2001

Link: https://doi.org/10.1143/..

3

Control of the Conduction Type of Nondoped High Mobility β-..:

Ken-ichiro Takakura, Ken-ichiro Takakura ; Takashi Suemasu, Takashi Suemasu ; Yoshihiro Ikura, Yoshihiro Ikura.
Japanese Journal of Applied Physics. 39 (2000) 8A - p. L789 , 2000

Link: https://doi.org/10.1143/..

4

Improvement of the Electrical Properties of β-FeSi 2 Filmso..:

Ken-ichiro Takakura, Ken-ichiro Takakura ; Takashi Suemasu, Takashi Suemasu ; Noriyoshi Hiroi, Noriyoshi Hiroi.
Japanese Journal of Applied Physics. 39 (2000) 3A - p. L233 , 2000

Link: https://doi.org/10.1143/..

5

Room Temperature 1.6 µm Electroluminescence from a Si-Based..:

Takashi Suemasu, Takashi Suemasu ; Yoichiro Negishi, Yoichiro Negishi ; Ken'ichiro Takakura, Ken'ichiro Takakura.
Japanese Journal of Applied Physics. 39 (2000) 10B - p. L1013 , 2000

Link: https://doi.org/10.1143/..

6

Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substra..:

Fumio Hasegawa, Fumio Hasegawa ; Masato Minami, Masato Minami ; Kenji Sunaba, Kenji Sunaba.
Japanese Journal of Applied Physics. 38 (1999) 7A - p. L700 , 1999

Link: https://doi.org/10.1143/..

7

Improvement of 1.5 µm Photoluminescence from Reactive Depos..:

Takashi Suemasu, Takashi Suemasu ; Yusuke Iikura, Yusuke Iikura ; Tetsuo Fujii, Tetsuo Fujii...
Japanese Journal of Applied Physics. 38 (1999) 6A - p. L620 , 1999

Link: https://doi.org/10.1143/..

8

Growth of Continuous and Highly (100)-Oriented β-FeSi 2 Fil..:

Takashi Suemasu, Takashi Suemasu ; Noriyoshi Hiroi, Noriyoshi Hiroi ; Tetsuo Fujii, Tetsuo Fujii..
Japanese Journal of Applied Physics. 38 (1999) 8A - p. L878 , 1999

Link: https://doi.org/10.1143/..

9

Magnetotransport Properties of a Single-Crystalline β-FeSi ..:

Takashi Suemasu, Takashi Suemasu ; Ken'ichiro Takakura, Ken'ichiro Takakura ; Masaya Tanaka, Masaya Tanaka..
Japanese Journal of Applied Physics. 37 (1998) 3B - p. L333 , 1998

Link: https://doi.org/10.1143/..

10

Influence of As Autodoping from GaAs Substrates on Thick Cu..:

Harutoshi Tsuchiya, Harutoshi Tsuchiya ; Kenji Sunaba, Kenji Sunaba ; Masato Minami, Masato Minami..
Japanese Journal of Applied Physics. 37 (1998) 5B - p. L568 , 1998

Link: https://doi.org/10.1143/..

11

Photoluminescence from Reactive Deposition Epitaxy (RDE)Gro..:

Takashi Suemasu, Takashi Suemasu ; Tetsuo Fujii, Tetsuo Fujii ; Yuusuke Iikura, Yuusuke Iikura..
Japanese Journal of Applied Physics. 37 (1998) 12B - p. L1513 , 1998

Link: https://doi.org/10.1143/..

12

Si Molecular Beam Epitaxial Growth over an Atomic-Layer Bor..:

Takashi Suemasu, Takashi Suemasu ; Masaki Yamamoto, Masaki Yamamoto ; Ken'ichiro Takakura, Ken'ichiro Takakura...
Japanese Journal of Applied Physics. 36 (1997) 12R - p. 7146 , 1997

Link: https://doi.org/10.1143/..

13

Formation of β-FeSi2Layers on Si(001) Substrates:

Masaya Tanaka, Masaya Tanaka ; Yoshinao Kumagai, Yoshinao Kumagai ; Takashi Suemasu, Takashi Suemasu.
Japanese Journal of Applied Physics. 36 (1997) 6R - p. 3620 , 1997

Link: https://doi.org/10.1143/..

14

Metal (CoSi 2)/Insulator (CaF 2) Hot Electron Transistor Fa..:

Wataru Saitoh, Wataru Saitoh ; Takashi Suemasu, Takashi Suemasu ; Yoshifumi Kohno, Yoshifumi Kohno..
Japanese Journal of Applied Physics. 34 (1995) 10A - p. L1254 , 1995

Link: https://doi.org/10.1143/..

15

Multiple Negative Differential Resistance due to Quantum In..:

Wataru Saitoh, Wataru Saitoh ; Takashi Suemasu, Takashi Suemasu ; Yoshifumi Kohno, Yoshifumi Kohno..
Japanese Journal of Applied Physics. 34 (1995) 8S - p. 4481 , 1995

Link: https://doi.org/10.1143/..

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