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Tang, Shun-Wei
6479  Ergebnisse:
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1

Using Gate Leakage Conduction to Understand Positive Gate B..:

Tang, Shun-Wei ; Bakeroot, Benoit ; Huang, Zhen-Hong...
IEEE Transactions on Electron Devices.  70 (2023)  2 - p. 449-453 , 2023
Link: https://doi.org/10.1109/..
 
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2

Dynamic on-resistance stability of SiC and GaN power device..:

Huang, Zhen-Hong ; Tang, Shun-Wei ; Fan, Chao-Ta..
Microelectronics Reliability.  145 (2023)  - p. 114983 , 2023
Link: https://doi.org/10.1016/..
 
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3

Ultra-Fast Positive Gate Bias Stress (<100ns) to Understand..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Huang, Zhen-Hong ; Lin, Wei-Syuan ; Lo, Ting-Chun... - p. 139-142 , 2023
Link: https://doi.org/10.1109/..
 
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4

Novel Topology with Continuous Switching to Comprehensively..:

, In: 2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Lin, Ming-Cheng ; Fan, Chao-Ta ; Tang, Shun-Wei.. - p. 81-84 , 2022
Link: https://doi.org/10.1109/..
 
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5

Demonstration of Schottky barrier diode integrated in 200 V..:

Gallardo, Jethro Oroceo ; Dash, Sachidananda ; Tran, Thanh Nga...
Microelectronics Reliability.  134 (2022)  - p. 114568 , 2022
Link: https://doi.org/10.1016/..
 
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6

Comprehensive Investigation of the Switching Stability in S..:

, In: 2022 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Tang, Shun-Wei ; Fan, Chao-Ta ; Lin, Ming-Cheng. - p. 1-5 , 2022
Link: https://doi.org/10.1109/..
 
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7

Process improvement of p-GaN HEMTs with a u-GaN etching buf..:

Chang, Chih-Yao ; Shen, Yao-Luen ; Tang, Shun-Wei...
Applied Physics Express.  15 (2022)  11 - p. 116503 , 2022
Link: https://doi.org/10.35848..
 
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8

Capacitance-Dependent VTH Instability Under a High dVg/dt E..:

Tang, Shun-Wei ; Lin, Wei-Syuan ; Huang, Zhen-Hong.
IEEE Electron Device Letters.  43 (2022)  10 - p. 1617-1620 , 2022
Link: https://doi.org/10.1109/..
 
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9

High Threshold Voltage Enhancement-Mode Regrown p-GaN Gate ..:

Tang, Shun-Wei ; Huang, Zhen-Hong ; Chen, Szu-Chia...
IEEE Electron Device Letters.  43 (2022)  10 - p. 1625-1628 , 2022
Link: https://doi.org/10.1109/..
 
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10

Investigation of the passivation-induced VTH shift in p-GaN..:

Tang, Shun-Wei ; Huang, Zhen-Hong ; Chen, Yi-Cheng...
Microelectronics Reliability.  122 (2021)  - p. 114150 , 2021
Link: https://doi.org/10.1016/..
 
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11

Analysis of the subthreshold characteristics in AlGaN/GaN H..:

Tang, Shun-Wei ; Chen, Szu-Chia ; Wu, Tian-Li
Microelectronics Reliability.  126 (2021)  - p. 114302 , 2021
Link: https://doi.org/10.1016/..
 
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12

Investigation on Stability of p-GaN HEMTs With an Indium–Ti..:

Chang, Chih-Yao ; Shen, Yao-Luen ; Wang, Ching-Yao...
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 687-690 , 2021
Link: https://doi.org/10.1109/..
 
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13

Stability of wireless power transfer using gamma-ray irradi..:

Tang, Shun-Wei ; Yao, Pei-Yu ; Chao, Der-Sheng..
Microelectronics Reliability.  126 (2021)  - p. 114425 , 2021
Link: https://doi.org/10.1016/..
 
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14

Silicon Nitride-induced Threshold Voltage Shift in p-GaN HE..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Chen, Yi-Cheng ; Tang, Shun-Wei ; Lin, Pin-Hau... - p. 1-5 , 2020
Link: https://doi.org/10.1109/..
 
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15

Robust Forward Gate Bias TDDB Stability in Enhancement-mode..:

, In: 2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA),
Tang, Shun-Wei ; Kutub, Sayeem Bin ; Wu, Tian-Li - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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