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Tang, Zhaohuan
47  Ergebnisse:
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1

Atmospheric Correction for Polarimetric Images Based on Spe..:

, In: 2022 the 6th International Conference on Innovation in Artificial Intelligence (ICIAI),
Xia, Pu ; Chen, Xiaolai ; Tang, Zhaohuan - p. 90-94 , 2022
Link: https://dl.acm.org/doi/1..
 
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2

A High-Performance SiC Super-Junction MOSFET With a Step-Do..:

Huang, Hao ; Wang, Ying ; Yu, Cheng-Hao...
IEEE Journal of the Electron Devices Society.  9 (2021)  - p. 1084-1092 , 2021
Link: https://doi.org/10.1109/..
 
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3

Updated structure of vertical double-diffused MOSFETs for i..:

Tang, Zhaohuan ; Li, Xingji ; Tan, Kaizhou..
Journal of Computational Electronics.  17 (2018)  4 - p. 1578-1583 , 2018
Link: https://doi.org/10.1007/..
 
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4

Molecular dynamics study of the effect of point defects on ..:

Chen, Xian ; Zhang, Jing ; Han, Liang.
Applied Surface Science.  456 (2018)  - p. 43-48 , 2018
Link: https://doi.org/10.1016/..
 
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5

Characterization of crystalline GeSn layer on tensile-strai..:

Miao, Yuanhao ; Wang, Yibo ; Hu, Huiyong...
Materials Science in Semiconductor Processing.  85 (2018)  - p. 134-140 , 2018
Link: https://doi.org/10.1016/..
 
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6

SEGR- and SEB-hardened structure with DSPSOI in power MOSFE..:

Tang, Zhaohuan ; Fu, Xinghua ; Yang, Fashun...
Journal of Semiconductors.  38 (2017)  12 - p. 124006 , 2017
Link: https://doi.org/10.1088/..
 
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7

Thin SOI lateral IGBT with band-to-band tunneling mechanism:

Fu, Qiang ; Tang, Zhaohuan ; Tan, Kaizhou..
Journal of Physics: Conference Series.  864 (2017)  - p. 012062 , 2017
Link: https://doi.org/10.1088/..
 
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8

A Ge-Graded SiGe HBT with β > 100and fT = 67 GHz:

Zhang, Jing ; Yang, Yonghui ; Chen, Guangbing...
World Journal of Engineering and Technology.  3 (2015)  4 - p. 1-5 , 2015
Link: https://doi.org/10.4236/..
 
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9

A novel terminal structure for total dose irradiation harde..:

Tang, Zhaohuan ; Liu, Rongkan ; Tan, Kaizhou...
Journal of Semiconductors.  35 (2014)  5 - p. 054005 , 2014
Link: https://doi.org/10.1088/..
 
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10

A 150% enhancement of PMOSFET mobility using hybrid orienta..:

Tang, Zhaohuan ; Tan, Kaizhou ; Cui, Wei...
Journal of Semiconductors.  33 (2012)  6 - p. 064002 , 2012
Link: https://doi.org/10.1088/..
 
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11

A strained Si-channel NMOSFET with low field mobility enhan..:

Cui, Wei ; Tang, Zhaohuan ; Tan, Kaizhou...
Journal of Semiconductors.  33 (2012)  9 - p. 094005 , 2012
Link: https://doi.org/10.1088/..
 
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12

A novel structure for improving the SEGR of a VDMOS:

Tang, Zhaohuan ; Hu, Gangyi ; Chen, Guangbing...
Journal of Semiconductors.  33 (2012)  4 - p. 044002 , 2012
Link: https://doi.org/10.1088/..
 
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13

A novel structure in reducing the on-resistance of a VDMOS:

Yang, Yonghui ; Tang, Zhaohuan ; Zhang, Zhengyuan...
Journal of Semiconductors.  32 (2011)  2 - p. 024005 , 2011
Link: https://doi.org/10.1088/..
 
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14

Design and application of a depletion-mode NJFET in a high-..:

Yong, Liu ; Zhaohuan, Tang ; Zhikuan, Wang...
Journal of Semiconductors.  31 (2010)  8 - p. 084006 , 2010
Link: https://doi.org/10.1088/..
 
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15

Design of a high-performance PJFET for the input stage of a..:

Guohua, Shui ; Zhaohuan, Tang ; Zhikuan, Wang...
Journal of Semiconductors.  31 (2010)  1 - p. 014004 , 2010
Link: https://doi.org/10.1088/..
 
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