E-LIB Suche - Ergebnisse für: Taniguchi, Fabio Kenji - Sprache DE

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1

Electric Vehicle Recharging and Roaming Protocols: A Brazil..:

, In: Proceedings of the 7th Brazilian Technology Symposium (BTSym'21); Smart Innovation, Systems and Technologies,

Matos, Jorge Henrique J. G. ; Taniguchi, Fabio Kenji ; Parreira, Anderson D... - p. 334-342 , 2022

Link: https://doi.org/10.1007/..

2

Carrier Transport across a Few Grain Boundariesin Highly Do..:

T. Tan, Yoshikazu Furuta ; K. Durrani, Toshio Kamiya ; Haroon Ahmed, Haroon Ahmed.
Japanese Journal of Applied Physics. 40 (2001) 6B - p. L615 , 2001

Link: https://doi.org/10.1143/..

3

Temperature Dependence of kBTC Noise in "Coulomb Blockade" ..:

Kenshi Tada, Kenshi Tada ; Yoshinobu Fujii, Yoshinobu Fujii ; Kenji Taniguchi, Kenji Taniguchi
Japanese Journal of Applied Physics. 40 (2001) 3S - p. 2050 , 2001

Link: https://doi.org/10.1143/..

4

Studies of Boron Segregation to {311} Defects in Silicon-Im..:

Jianxin Xia, Jianxin Xia ; Tomoya Saito, Tomoya Saito ; Ryangsu Kim, Ryangsu Kim...
Japanese Journal of Applied Physics. 38 (1999) 4S - p. 2319 , 1999

Link: https://doi.org/10.1143/..

5

Boron Accumulation in the {311} Defect RegionInduced by Sel..:

Jianxin Xia, Jianxin Xia ; Tomoya Saito, Tomoya Saito ; Takenori Aoki, Takenori Aoki..
Japanese Journal of Applied Physics. 37 (1998) 8A - p. L913 , 1998

Link: https://doi.org/10.1143/..

6

A Single Electron Neuron Device:

Masaharu Kirihara, Masaharu Kirihara ; Kenji Taniguchi, Kenji Taniguchi
Japanese Journal of Applied Physics. 36 (1997) 6S - p. 4172 , 1997

Link: https://doi.org/10.1143/..

7

Influence of N2O Oxynitridation on Interface Trap Generatio..:

Toshimasa Matsuoka, Toshimasa Matsuoka ; Shigenari Taguchi, Shigenari Taguchi ; Kenji Taniguchi, Kenji Taniguchi...
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 887 , 1996

Link: https://doi.org/10.1143/..

8

Impact Ionization Model UsingAverage Energy and Average Squ..:

Ken-ichiro Sonoda, Ken-ichiro Sonoda ; Scott T. Dunham, Scott T. Dunham ; Mitsuru Yamaji, Mitsuru Yamaji..
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 818 , 1996

Link: https://doi.org/10.1143/..

9

High-Sensitivity SOI MOS Photodetector with Self-Amplificat..:

Hideaki Yamamoto, Hideaki Yamamoto ; Kenji Taniguchi, Kenji Taniguchi ; Chihiro Hamaguchi, Chihiro Hamaguchi
Japanese Journal of Applied Physics. 35 (1996) 2S - p. 1382 , 1996

Link: https://doi.org/10.1143/..

10

Study of a Length Coefficient for an Extended Drift-Diffusi..:

Ken-ichiro Sonoda, Ken-ichiro Sonoda ; Koji Kanno, Koji Kanno ; Kenji Taniguchi, Kenji Taniguchi.
Japanese Journal of Applied Physics. 35 (1996) 11A - p. L1398 , 1996

Link: https://doi.org/10.1143/..

11

Theoretical Study of Minority Carrier Lifetimes due to Auge..:

Kee Jung, Hak ; Kenji Taniguchi, Kenji Taniguchi ; Chihiro Hamaguchi, Chihiro Hamaguchi
Japanese Journal of Applied Physics. 34 (1995) 6R - p. 3054 , 1995

Link: https://doi.org/10.1143/..

12

Hole Trapping and Detrapping Characteristics Investigated b..:

Khosru, Quazi Deen Mohd ; Yasuda, Naoki ; Kenji Taniguchi, Kenji Taniguchi.
Japanese Journal of Applied Physics. 33 (1994) 1S - p. 668 , 1994

Link: https://doi.org/10.1143/..

13

Evaluation of Spatial Distribution of Hole Traps Using Depl..:

Yasuda, Naoki ; Toyoshima, Yoshiaki ; Hashimoto, Kazuhiko..
Japanese Journal of Applied Physics. 32 (1993) 1R - p. 31 , 1993

Link: https://doi.org/10.1143/..

14

Hot-Hole-Induced Interface State Generation in p-Channel MO..:

Khosru, Quazi Deen Mohd ; Yasuda, Naoki ; Kenji Taniguchi, Kenji Taniguchi.
Japanese Journal of Applied Physics. 32 (1993) 1S - p. 423 , 1993

Link: https://doi.org/10.1143/..

15

Spatial Distribution of Trapped Holes in the Oxide of Metal..:

Khosru, Quazi Deen Mohd ; Yasuda, Naoki ; Maruyama, Akinori..
Japanese Journal of Applied Physics. 30 (1991) 12S - p. 3652 , 1991

Link: https://doi.org/10.1143/..

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