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1

Comparison of BF2, In, Ga, C+Ga & In+BF2 Dopant for 22nm no..:

, In: 2012 12th International Workshop on Junction Technology,

Borland, John ; Tanjyo, Masayasu ; Sakai, Shigeki... - p. 38-41 , 2012

Link: https://doi.org/10.1109/..

2

Improvement of productivity by cluster ion implanter: CLARI:

, In: 2010 International Workshop on Junction Technology Extended Abstracts,

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Umisedo, Sei... - p. 1-4 , 2010

Link: https://doi.org/10.1109/..

3

Effects of cluster carbon implantation at low temperature o..:

, In: 2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP),

Onoda, Hiroshi ; Hamamoto, Nariaki ; Nagayama, Tsutomu... - p. 72-75 , 2010

Link: https://doi.org/10.1109/..

4

Suppression of phosphorus diffusion using cluster Carbon co..:

, In: 2010 International Workshop on Junction Technology Extended Abstracts,

Nagayama, Tsutomu ; Onoda, Hiroshi ; Tanjyo, Masayasu... - p. 1-4 , 2010

Link: https://doi.org/10.1109/..

5

22nm node n+ SiC stressor using deep PAI+C7H7+P4 with laser..:

, In: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors,

Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki... - p. None , 2009

Link: https://doi.org/10.1109/..

6

Cluster Ion Implantation System: Claris for Beyond 45nm Dev..:

Tanjyo, Masayasu ; Hamamoto, Nariaki ; Nagayama, Tsutomu...
ECS Transactions. 18 (2009) 1 - p. 1059-1064 , 2009

Link: https://doi.org/10.1149/..

7

22nm node p+ junction scaling using B36H44 and laser anneal..:

, In: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors,

Borland, John ; Tanjyo, Masayasu ; Hamamoto, Nariaki... - p. None , 2009

Link: https://doi.org/10.1109/..

8

Ion implantation technology and system for beyond 45nm node..:

, In: 2008 9th International Conference on Solid-State and Integrated-Circuit Technology,

Tanjyo, Masayasu ; Nagayama, Tsutomu ; Hamamoto, Nariaki... - p. None , 2008

Link: https://doi.org/10.1109/..

9

Molecular Dopants and High Mass Dopants for HALO and Extens..:

, In: 2007 International Workshop on Junction Technology,

Mineji, Akira ; Borland, John ; Shishiguchi, Seiichi... - p. None , 2007

Link: https://doi.org/10.1109/..

10

Development of Nissin new boron cluster ion implanter:

, In: 2007 International Workshop on Junction Technology,

Hamamoto, Nariaki ; Umisedo, Sei ; Koga, Yuji... - p. None , 2007

Link: https://doi.org/10.1109/..

11

Decaborane implantation with the medium current implanter:

Hamamoto, Nariaki ; Umisedo, Sei ; Nagayama, Tsutomu...
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 237 (2005) 1-2 - p. 443-448 , 2005

Link: https://doi.org/10.1016/..

12

RF ion source for low energy ion implantation — beam profil..:

Tanjyo, Masayasu ; Sakai, Shigeki ; Takahashi, Masato
Surface and Coatings Technology. 136 (2001) 1-3 - p. 281-284 , 2001

Link: https://doi.org/10.1016/..

13

Profile control of the large area ribbon beam ion source us..:

Sakai, Shigeki ; Takahashi, Masato ; Tanjyo, Masayasu
Review of Scientific Instruments. 71 (2000) 2 - p. 958-959 , 2000

Link: https://doi.org/10.1063/..

14

Change of diborane ion species depending on the magnitude o..:

Sakai, Shigeki ; Takahashi, Masato ; Tanjyo, Masayasu
Review of Scientific Instruments. 71 (2000) 2 - p. 960-962 , 2000

Link: https://doi.org/10.1063/..

15

Development of an ion source for the low energy ion implant..:

Sakai, Shigeki ; Takahashi, Masato ; Tanjyo, Masayasu.
Materials Chemistry and Physics. 54 (1998) 1-3 - p. 44-48 , 1998

Link: https://doi.org/10.1016/..

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