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Tapily, Kandabara
45  Ergebnisse:
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1

Impact of Plasma Activation on Copper Surface Layer for Low..:

, In: 2023 IEEE 73rd Electronic Components and Technology Conference (ECTC),
Netzband, Christopher ; Burns, Dylan ; Tapily, Kandabara.. - p. 350-355 , 2023
Link: https://doi.org/10.1109/..
 
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2

Antiferroelectric negative capacitance from a structural ph..:

Hoffmann, Michael ; Wang, Zheng ; Tasneem, Nujhat...
Nature Communications.  13 (2022)  1 - p. , 2022
Link: https://doi.org/10.1038/..
 
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3

Process-Induced ReRAM Performance Improvement of Atomic Lay..:

Consiglio, Steven ; Higuchi, Hisashi ; Ando, Takashi...
ECS Transactions.  102 (2021)  2 - p. 19-28 , 2021
Link: https://doi.org/10.1149/..
 
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4

Ferroelectric Phase Content in 7 nm Hf(1−x)ZrxO2 Thin Films..:

Mukundan, Vineetha ; Consiglio, Steven ; Triyoso, Dina H....
physica status solidi (a).  218 (2021)  10 - p. , 2021
Link: https://doi.org/10.1002/..
 
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5

RRAM Devices with Plasma Treated HfO2 with Ru as Top Electr..:

Patel, Yuvraj ; Misra, Durga ; Triyoso, Dina H....
ECS Transactions.  104 (2021)  3 - p. 35-44 , 2021
Link: https://doi.org/10.1149/..
 
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6

Material Innovation in the Era of Artificial Intelligence -..:

, In: 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),
Triyoso, Dina H. ; Clark, Robert D. ; Consiglio, Steven... - p. 1-4 , 2020
Link: https://doi.org/10.1109/..
 
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7

Process Dependent Optimization of Dielectric and Metal Stac..:

Zhao, Pengxiang ; Misra, Durga ; Triyoso, Dina...
ECS Transactions.  97 (2020)  3 - p. 13-20 , 2020
Link: https://doi.org/10.1149/..
 
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8

Quantifying non-centrosymmetric orthorhombic phase fraction..:

Mukundan, Vineetha ; Consiglio, Steven ; Triyoso, Dina H....
Applied Physics Letters.  117 (2020)  26 - p. , 2020
Link: https://doi.org/10.1063/..
 
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9

Structural Correlation of Ferroelectric Behavior in Mixed H..:

Mukundan, Vineetha ; Beckmann, Karsten ; Tapily, Kandabara...
MRS Advances.  4 (2019)  9 - p. 545-551 , 2019
Link: https://doi.org/10.1557/..
 
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10

Multilevel Resistive Switching in Hf-Based RRAM:

Jain, Barsha ; Huang, Chia-sheng ; Misra, Durgamadhab...
ECS Transactions.  89 (2019)  3 - p. 39-44 , 2019
Link: https://doi.org/10.1149/..
 
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11

Bilayer Dielectrics for RRAM Devices:

Misra, Durgamadhab ; Sultana, Sabiha ; Jain, Barsha...
ECS Transactions.  86 (2018)  2 - p. 77-83 , 2018
Link: https://doi.org/10.1149/..
 
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12

Reliability of Post Plasma Oxidation Processed ALD Al2O3/Hf..:

Bhuyian, Md Nasir Uddin ; Sengupta, Arijit ; Ding, Yiming...
ECS Transactions.  77 (2017)  2 - p. 99-108 , 2017
Link: https://doi.org/10.1149/..
 
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13

The Effect of Defects on Time Dependent Dielectric Breakdow..:

Ding, Yiming ; Misra, Durgamadhab ; Tapily, Kandabara...
ECS Transactions.  77 (2017)  5 - p. 43-50 , 2017
Link: https://doi.org/10.1149/..
 
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14

Higher-k Tetragonal Phase Stabilization in Atomic Layer Dep..:

Dey, Sonal ; Tapily, Kandabara ; Consiglio, Steven...
MRS Advances.  1 (2016)  4 - p. 269-274 , 2016
Link: https://doi.org/10.1557/..
 
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15

Electrically Scaled Hafnium Oxide Based Ge Devices:

Tapily, Kandabara ; Dey, Sonal ; Consiglio, Steven...
ECS Transactions.  75 (2016)  5 - p. 135-140 , 2016
Link: https://doi.org/10.1149/..
 
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