E-LIB Suche - Ergebnisse für: Temkin, H.

1

Growth of GaN Nanowires on Epitaxial GaN:

Aurongzeb, D. ; Song, D.Y. ; Kipshidze, G....
Journal of Electronic Materials. 37 (2008) 8 - p. 1076-1081 , 2008

Link: https://doi.org/10.1007/..

2

X-ray diffraction study of AlN∕AlGaN short period superlatt..:

Chandolu, A. ; Nikishin, S. ; Holtz, M..
Journal of Applied Physics. 102 (2007) 11 - p. , 2007

Link: https://doi.org/10.1063/..

3

Direct space-to-time pulse shaper with reflective arrayed w..:

Krishnan, A. ; Grave de Peralta, L. ; Kuryatkov, V...
Optics Letters. 31 (2006) 5 - p. 640 , 2006

Link: https://doi.org/10.1364/..

4

Nanoscale surface roughening in ultrathin aluminum films:

Aurongzeb, D. ; Washington, E. ; Basavaraj, M....
Journal of Applied Physics. 100 (2006) 11 - p. , 2006

Link: https://doi.org/10.1063/..

5

Enhanced radiative recombination in AlGaN quantum wells gro..:

Borisov, B. A. ; Nikishin, S. N. ; Kuryatkov, V. V....
Semiconductors. 40 (2006) 4 - p. 454-458 , 2006

Link: https://doi.org/10.1134/..

6

Formation of nickel nanodots on GaN:

Aurongzeb, D. ; Ram, K. Bhargava ; Holtz, M....
Journal of Applied Physics. 99 (2006) 1 - p. , 2006

Link: https://doi.org/10.1063/..

7

Depth dependence of defect density and stress in GaN grown ..:

Faleev, N. ; Temkin, H. ; Ahmad, I...
Journal of Applied Physics. 98 (2005) 12 - p. , 2005

Link: https://doi.org/10.1063/..

8

Controlled growth of GaN nanowires by pulsed metalorganic c..:

Kipshidze, G. ; Yavich, B. ; Chandolu, A....
Applied Physics Letters. 86 (2005) 3 - p. , 2005

Link: https://doi.org/10.1063/..

9

Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam..:

Borisov, B. ; Kuryatkov, V. ; Kudryavtsev, Yu....
Applied Physics Letters. 87 (2005) 13 - p. 132106 , 2005

Link: https://doi.org/10.1063/..

10

Enhanced deep ultraviolet luminescence from AlGaN quantum w..:

Borisov, B. ; Nikishin, S. ; Kuryatkov, V..
Applied Physics Letters. 87 (2005) 19 - p. , 2005

Link: https://doi.org/10.1063/..

11

Metal-organic molecular-beam epitaxy of GaN with trimethylg..:

Gherasoiu, I. ; Nikishin, S. ; Temkin, H.
Journal of Applied Physics. 98 (2005) 5 - p. , 2005

Link: https://doi.org/10.1063/..

12

Analysis of nonselective plasma etching of AlGaN by CF4∕Ar∕..:

Kuryatkov, V. ; Borisov, B. ; Saxena, J....
Journal of Applied Physics. 97 (2005) 7 - p. , 2005

Link: https://doi.org/10.1063/..

13

Self-assembly of faceted Ni nanodots on Si(111):

Aurongzeb, D. ; Patibandla, S. ; Holtz, M..
Applied Physics Letters. 86 (2005) 10 - p. , 2005

Link: https://doi.org/10.1063/..

14

The influence of interface roughness on electrical transpor..:

Aurongzeb, D. ; Holtz, M. ; Berg, J. M...
Journal of Applied Physics. 98 (2005) 6 - p. , 2005

Link: https://doi.org/10.1063/..

15

Mirror Quality and the Performance of Reflective Arrayed-Wa..:

Bernussi, A.A. ; dePeralta, L.G. ; Gorbounov, V....
Journal of Lightwave Technology. 22 (2004) 7 - p. 1828-1832 , 2004

Link: https://doi.org/10.1109/..