E-LIB Suche - Ergebnisse für: Terashima, Kazutaka

1

Characteristics of Ohmic Contacts to n-Type Boron Phosphide:

Ino, Yuji ; Nishimura, Suzuka ; Hirai, Muneyuki..
Japanese Journal of Applied Physics. 52 (2013) 3R - p. 031201 , 2013

Link: https://doi.org/10.7567/..

2

Strong Visible Light Emission from Zinc-Blende InGaN/GaN Pn..:

Nishimura, Suzuka ; Hirai, Muneyuki ; Nagayoshi, Hiroshi.
ECS Transactions. 53 (2013) 2 - p. 87-91 , 2013

Link: https://doi.org/10.1149/..

3

Silicon Whisker Growth Using Hot Filament Reactor with Hydr..:

Nagayoshi, Hiroshi ; Nordmark, Heidi ; Holmestad, Randi...
Japanese Journal of Applied Physics. 47 (2008) 6R - p. 4807 , 2008

Link: https://doi.org/10.1143/..

4

Role of oxygen atoms in CaF2 crystals doped with Eu atom:

Nishimura, Suzuka ; Terashima, Kazutaka ; Nagayoshi, Hiroshi
Journal of Applied Physics. 104 (2008) 5 - p. , 2008

Link: https://doi.org/10.1063/..

5

Surface Texturing of Silicon by Hydrogen Radicals:

Nagayoshi, Hiroshi ; Konno, Keita ; Nishimura, Suzuka.
Japanese Journal of Applied Physics. 44 (2005) 11R - p. 7839 , 2005

Link: https://doi.org/10.1143/..

6

Growth of GaN on Si substrates – roles of BP thin layer:

Nishimura, S ; Matsumoto, Satoru ; Terashima, Kazutaka
Optical Materials. 19 (2002) 1 - p. 223-228 , 2002

Link: https://doi.org/10.1016/..

7

Density of molten calcium fluoride:

Jingu, Suguru ; Chen, Xiumei ; Nishimura, Suzuka..
Journal of Crystal Growth. 237-239 (2002) - p. 1797-1801 , 2002

Link: https://doi.org/10.1016/..

8

Growth of GaN on Si(100) substrates using BP as a buffer la..:

Nishimura, Suzuka ; Hanamoto, Hidetoshi ; Terashima, Kazutaka.
Materials Science and Engineering: B. 93 (2002) 1-3 - p. 135-138 , 2002

Link: https://doi.org/10.1016/..

9

The effects of boron impurity on the extended defects in CZ..:

Terashima, Kazutaka ; Noguchi, Hajime
Journal of Crystal Growth. 237-239 (2002) - p. 1663-1666 , 2002

Link: https://doi.org/10.1016/..

10

Dependence of Si melt flow in a crucible on surface tension..:

Nakanishi, Hideo ; Watanabe, Masayuki ; Terashima, Kazutaka
Journal of Crystal Growth. 236 (2002) 4 - p. 523-528 , 2002

Link: https://doi.org/10.1016/..

11

Density and surface tension of molten calcium fluoride:

Chen, Xiumei ; Jinguu, Suguru ; Nishimura, Suzuka..
Journal of Crystal Growth. 240 (2002) 3-4 - p. 445-453 , 2002

Link: https://doi.org/10.1016/..

12

Variation of silicon melt viscosity with boron addition:

Nishimura, Suzuka ; Matsumoto, Satoru ; Terashima, Kazutaka
Journal of Crystal Growth. 237-239 (2002) - p. 1667-1670 , 2002

Link: https://doi.org/10.1016/..

13

Annealing effect and impurity doping effects on the defect ..:

Terashima, Kazutaka ; Nishimura, Suzuka
Materials Science and Engineering: B. 91-92 (2002) - p. 178-181 , 2002

Link: https://doi.org/10.1016/..

14

Silicon melt density — problems of Archimedean technique:

Terashima, Kazutaka ; Kanno, Kazuya
Materials Science in Semiconductor Processing. 4 (2001) 1-3 - p. 249-251 , 2001

Link: https://doi.org/10.1016/..

15

Initial Dissolution Rate of Quartz Rods in Silicon Melts:In..:

Abe, Keisei ; Matsumoto, Takeshi ; Terashima, Kazutaka
Japanese Journal of Applied Physics. 39 (2000) 7A - p. L644 , 2000

Link: https://doi.org/10.1143/..