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X
Thayne, I. G.
126  Ergebnisse:
Personensuche X
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1

Impact of stress in ICP‐CVD SiNxpassivation films on the le..:

Cho, S.‐J. ; Li, X. ; Guiney, I....
Electronics Letters.  54 (2018)  15 - p. 947-949 , 2018
Link: https://doi.org/10.1049/..
 
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2

TEM characterization of GaSb grown on single crystal offcut..:

Porter, H. L. ; Steer, M. J. ; Craven, A. J....
Microscopy and Microanalysis.  23 (2017)  S1 - p. 1476-1477 , 2017
Link: https://doi.org/10.1017/..
 
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3

Control of threshold voltage in E-mode and D-mode GaN-on-Si..:

Roberts, J. W. ; Chalker, P. R. ; Lee, K. B....
Applied Physics Letters.  108 (2016)  7 - p. , 2016
Link: https://doi.org/10.1063/..
 
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4

A study of the impact of in-situ argon plasma treatment bef..:

Cho, S.J. ; Roberts, J.W. ; Guiney, I....
Microelectronic Engineering.  147 (2015)  - p. 277-280 , 2015
Link: https://doi.org/10.1016/..
 
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5

Terahertz oscillations in an In0.53Ga0.47As submicron plana..:

Khalid, Ata ; Dunn, G. M. ; Macpherson, R. F....
Journal of Applied Physics.  115 (2014)  11 - p. , 2014
Link: https://doi.org/10.1063/..
 
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6

Admittance and subthreshold characteristics of atomic-layer..:

Paterson, G. W. ; Bentley, S. J. ; Holland, M. C....
Journal of Applied Physics.  111 (2012)  10 - p. , 2012
Link: https://doi.org/10.1063/..
 
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7

Modeling and analysis of the admittance characteristics of ..:

Paterson, G. W. ; Holland, M. C. ; Thayne, I. G..
Journal of Applied Physics.  111 (2012)  7 - p. , 2012
Link: https://doi.org/10.1063/..
 
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8

Gadolinium gallium oxide/gallium oxide insulators on GaAs a..:

Paterson, G. W. ; Holland, M. C. ; Bentley, S. J...
Journal of Applied Physics.  109 (2011)  12 - p. , 2011
Link: https://doi.org/10.1063/..
 
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9

Broadening of metal-oxide-semiconductor admittance characte..:

Paterson, G. W. ; Holland, M. C. ; Thayne, I. G..
Journal of Applied Physics.  110 (2011)  11 - p. , 2011
Link: https://doi.org/10.1063/..
 
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10

Electrical characteristics of gadolinium gallium oxide/gall..:

Paterson, G. W. ; Bentley, S. J. ; Holland, M. C...
Journal of Applied Physics.  110 (2011)  5 - p. , 2011
Link: https://doi.org/10.1063/..
 
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11

Demonstration of a W-band microstrip parallel coupled-line ..:

, In: IET Seminar on Passive RF and Microwave Components,
Lok, L. B. ; Hwang, C.-J. ; Thayne, I. G.. - p. 37-51 , 2010
Link: https://doi.org/10.1049/..
 
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12

Dry etching device quality high-κ GaxGdyOz gate oxide in Si..:

Li, X. ; Zhou, H. ; Hill, R.J.W....
Microelectronic Engineering.  87 (2010)  5-8 - p. 1587-1589 , 2010
Link: https://doi.org/10.1016/..
 
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13

Two methods of realising 10 nm T-gate lithography:

Bentley, S. ; Li, X. ; Moran, D.A.J..
Microelectronic Engineering.  86 (2009)  4-6 - p. 1067-1070 , 2009
Link: https://doi.org/10.1016/..
 
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14

A nanoanalytical investigation of the Ga2O3/GaGdO dielectri..:

Longo, P. ; Paterson, G.W. ; Holland, M.C...
Microelectronic Engineering.  86 (2009)  7-9 - p. 1568-1570 , 2009
Link: https://doi.org/10.1016/..
 
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15

A nanoanalytical investigation of high-k dielectric gate st..:

Longo, P. ; Craven, A.J. ; Holland, M.C...
Microelectronic Engineering.  86 (2009)  3 - p. 214-217 , 2009
Link: https://doi.org/10.1016/..
 
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