E-LIB Suche - Ergebnisse für: Thonke, K

1

Determination of donor and DX center capture characteristic..:

Lamprecht, M. ; Thonke, K.
Journal of Applied Physics. 123 (2018) 9 - p. , 2018

Link: https://doi.org/10.1063/..

2

Model for the deep defect‐related emission bands between 1...:

Lamprecht, M. ; Jmerik, V. N. ; Collazo, R....
physica status solidi (b). 254 (2017) 8 - p. , 2017

Link: https://doi.org/10.1002/..

3

Persistent photoconductivity in ZnO nanowires: Influence of..:

Madel, M. ; Huber, F. ; Mueller, R....
Journal of Applied Physics. 121 (2017) 12 - p. , 2017

Link: https://doi.org/10.1063/..

4

Evidence of terbium and oxygen co-segregation in annealed A..:

Angadi, V. C. ; Benz, F. ; Tischer, I....
Applied Physics Letters. 110 (2017) 22 - p. , 2017

Link: https://doi.org/10.1063/..

5

Composition analysis of coaxially grown InGaN multi quantum..:

Aschenbrenner, Timo ; Schowalter, M. ; Müller-Caspary, K. ; Heinz, D..... (2016) 17 - p. 175701-1-175701-6

Link: https://doi.org/10.1063/..

6

Composition analysis of coaxially grown InGaN multi quantum..:

Aschenbrenner, T. ; Schowalter, M. ; Mehrtens, T....
Journal of Applied Physics. 119 (2016) 17 - p. , 2016

Link: https://doi.org/10.1063/..

7

Slow decay of a defect‐related emission band at 2.05 eV in ..:

Lamprecht, M. ; Grund, C. ; Bauer, S....
physica status solidi (b). 254 (2016) 5 - p. , 2016

Link: https://doi.org/10.1002/..

8

Very slow decay of a defect related emission band at 2.4 eV..:

Lamprecht, M. ; Grund, C. ; Neuschl, B....
Journal of Applied Physics. 119 (2016) 15 - p. , 2016

Link: https://doi.org/10.1063/..

9

Stacking fault emission in GaN: Influence of n-type doping:

Hocker, M. ; Tischer, I. ; Neuschl, B....
Journal of Applied Physics. 119 (2016) 18 - p. , 2016

Link: https://doi.org/10.1063/..

10

Zeeman spectroscopy of the internal transition 4T1 to 6A1 o..:

Neuschl, B. ; Gödecke, M. L. ; Thonke, K....
Journal of Applied Physics. 118 (2015) 21 - p. , 2015

Link: https://doi.org/10.1063/..

11

c -plane ZnO on a -plane sapphire: Inclusion of (11¯01) dom..:

Madel, M. ; Neusser, G. ; Simon, U...
Journal of Crystal Growth. 419 (2015) - p. 128-132 , 2015

Link: https://doi.org/10.1016/..

12

Optical absorption of polar and semipolar InGaN/GaN quantum..:

Neuschl, B. ; Helbing, J. ; Thonke, K....
Journal of Applied Physics. 116 (2014) 18 - p. , 2014

Link: https://doi.org/10.1063/..

13

Growth and doping of semipolar GaN grown on patterned sapph..:

Scholz, F. ; Meisch, T. ; Caliebe, M....
Journal of Crystal Growth. 405 (2014) - p. 97-101 , 2014

Link: https://doi.org/10.1016/..

14

Nanoscale characterisation of semiconductors by cathodolumi..:

Thonke, K ; Tischer, I ; Hocker, M...
IOP Conference Series: Materials Science and Engineering. 55 (2014) - p. 012018 , 2014

Link: https://doi.org/10.1088/..

15

Composition dependent valence band order in c-oriented wurt..:

Neuschl, B. ; Helbing, J. ; Knab, M....
Journal of Applied Physics. 116 (2014) 11 - p. , 2014

Link: https://doi.org/10.1063/..