E-LIB Suche - Ergebnisse für: Treat, D.W.

1

Depth-resolved cathodoluminescence of a homoepitaxial AlN t..:

Silveira, E. ; Freitas, J.A. ; Slack, G.A....
Journal of Crystal Growth. 281 (2005) 1 - p. 188-193 , 2005

Link: https://doi.org/10.1016/..

2

Near-bandedge cathodoluminescence of an AlN homoepitaxial f..:

Silveira, E. ; Freitas Jr., J. A. ; Kneissl, M....
Applied Physics Letters. 84 (2004) 18 - p. 3501-3503 , 2004

Link: https://doi.org/10.1063/..

3

Influence of microstructure on the carrier concentration of..:

Romano, L. T. ; Kneissl, M. ; Northrup, J. E...
Applied Physics Letters. 79 (2001) 17 - p. 2734-2736 , 2001

Link: https://doi.org/10.1063/..

4

Anisotropic apertures for polarization-stable laterally oxi..:

Chua, C. L. ; Thornton, R. L. ; Treat, D. W..
Applied Physics Letters. 73 (1998) 12 - p. 1631-1633 , 1998

Link: https://doi.org/10.1063/..

5

Red and infrared side by side semiconductor quantum well la..:

Sun, D. ; Treat, D. W. ; Beernink, K...
Applied Physics Letters. 73 (1998) 13 - p. 1793-1795 , 1998

Link: https://doi.org/10.1063/..

6

Low-threshold InAlGaAs vertical-cavity surface-emitting las..:

Chua, C. L. ; Thornton, R. L. ; Treat, D. W...
Applied Physics Letters. 72 (1998) 9 - p. 1001-1003 , 1998

Link: https://doi.org/10.1063/..

7

Improved performance of laterally oxidized GaInP/AlGaInP la..:

Floyd, P. D. ; Treat, D. W.
Applied Physics Letters. 70 (1997) 19 - p. 2493-2495 , 1997

Link: https://doi.org/10.1063/..

8

Laterally oxidized GaInP/AlGaInP quantum well visible laser..:

Floyd, P. D. ; Sun, D. ; Treat, D. W.
Journal of Applied Physics. 82 (1997) 5 - p. 2710-2712 , 1997

Link: https://doi.org/10.1063/..

9

Indium tin oxide transparent electrodes for vertical-cavity..:

, In: CLEO '97., Summaries of Papers Presented at the Conference on Lasers and Electro-Optics,

Chua, C.L. ; Thornton, R.L. ; Treat, D.W... - p. 196,197 , 1997

Link: https://doi.org/10.1109/..

10

Dual-wavelength AlGaAs/GaAs laser by selective removal of a..:

Beernink, K. J. ; Sun, D. ; Thornton, R. L..
Applied Physics Letters. 68 (1996) 3 - p. 284-286 , 1996

Link: https://doi.org/10.1063/..

11

Differential Al–Ga interdiffusion in AlGaAs/GaAs and AlGaIn..:

Beernink, K. J. ; Sun, D. ; Treat, D. W..
Applied Physics Letters. 66 (1995) 26 - p. 3597-3599 , 1995

Link: https://doi.org/10.1063/..

12

The use of graded InGaAs layers and patterned substrates to..:

Knall, J. ; Romano, L. T. ; Biegelsen, D. K....
Journal of Applied Physics. 76 (1994) 5 - p. 2697-2702 , 1994

Link: https://doi.org/10.1063/..

13

Polarized electroluminescence spectra of GaxIn1−xP/(Al0.6Ga..:

Bour, D. P. ; Paoli, T. L. ; Thornton, R. L....
Applied Physics Letters. 62 (1993) 26 - p. 3458-3460 , 1993

Link: https://doi.org/10.1063/..

14

Native-oxide defined In0.5(AlxGa1−x)0.5P quantum well heter..:

Maranowski, S. A. ; Kish, F. A. ; Caracci, S. J....
Applied Physics Letters. 61 (1992) 14 - p. 1688-1690 , 1992

Link: https://doi.org/10.1063/..

15

Organometallic vapor phase epitaxial growth and characteriz..:

Wang, T. Y. ; Welch, D. F. ; Scifres, D. R....
Applied Physics Letters. 60 (1992) 8 - p. 1007-1009 , 1992

Link: https://doi.org/10.1063/..